相关论文: Snake States in Graphene p-n Junctions
We report the formation of bound states in the continuum for Dirac-like fermions in structures composed by a trilayer graphene flake connected to nanoribbon leads. The existence of this kind of localized states can be proved by combining…
Electrons transmitted across a ballistic semiconductor junction undergo refraction, analogous to light rays across an optical boundary. A pn junction theoretically provides the equivalent of a negative index medium, enabling novel electron…
We present transport measurements on quantum dots of sizes 45, 60 and 80 nm etched with an Ar/O2-plasma into a single graphene sheet, allowing a size comparison avoiding effects from different graphene flakes. The transport gaps and…
Graphene on a substrate has been shown to exhibit a transition, depending on the substrate material, from a zero-gap semiconductor state to a semimetallic state. The ground-state energy of the electron (hole) gas has been calculated within…
The effects of strain, induced by a Gaussian bump, on the magnetic field dependent transport properties of a graphene Hall bar are investigated. The numerical simulations are performed using both classical and quantum mechanical transport…
Imperfections change essentially the electronic transport properties of graphene. Motivated by a recent experiment reporting on the possible application of graphene as junctions, we study transport properties in graphene-based junctions…
We report on the evolution of the coherent electronic transport through a gate-defined constriction in a high-mobility graphene device from ballistic transport to quantum Hall regime upon increasing the magnetic field. At low field, the…
We present a theory of quantum-coherent transport through a lateral p-n-p structure in graphene, which fully accounts for the interference of forward and backward scattering on the p-n interfaces. The backreflection amplitude changes sign…
We use Scanning Gate Microscopy to demonstrate the presence of localized states arising from potential inhomogeneities in a 50nm-wide, gate-defined conducting channel in encapsulated bilayer graphene. When imaging the channel conductance…
We investigate charge transport of pn and npn junctions made from silicene, Si analogue of graphene. The conductance shows the distinct gate-voltage dependences peculiar to the topological and non-topological phases, where the topological…
The remarkable electronic properties of graphene have fueled the vision of a graphene-based platform for lighter, faster and smarter electronics and computing applications. One of the challenges is to devise ways to tailor its electronic…
We theoretically consider, comparing with the existing experimental literature, the electrical conductivity of gated monolayer graphene as a function of carrier density, temperature, and disorder in order to assess the prospects of…
The electronic states of an electrostatically confined cylindrical graphene quantum dot and the electric transport through this device are studied theoretically within the continuum Dirac-equation approximation and compared with numerical…
Disordered Fermi-Dirac distributions are used to model, within a straightforward and essentially phenomenological Boltzmann equation approach, the electron/hole transport across graphene puddles. We establish, with striking experimental…
At high magnetic fields the conductance of graphene is governed by the half-integer quantum Hall effect. By local electrostatic gating a \textit{p-n} junction perpendicular to the graphene edges can be formed, along which quantum Hall…
Manipulating electron quantum 1D channels is an important element in the field of quantum information due to their ballistic and phase coherence properties. In GaAs and graphene based two dimensional gas systems, these edge channels have…
Graphene serves as an ideal platform to investigate the microscopic structure and reaction kinetics at the graphitic electrode interfaces. However, graphene is susceptible to various extrinsic factors, e.g. substrate, causing much confusion…
We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is…
Guiding electronic waves in a manner similar to photon transmission in optical fibers is key for developing the electron-optics toolbox. Here we outline a `weak guiding' approach, in which efficient diffraction around disorder results in…
We report on the observation of magnetoresistance oscillations in graphene p-n junctions. The oscillations have been observed for six samples, consisting of single-layer and bilayer graphene, and persist up to temperatures of 30 K, where…