In contrast to graphene which is a gapless semiconductor, graphane, the hydrogenated graphene, is a semiconductor with an energy gap. Together with the two-dimensional geometry, unique transport features of graphene, and possibility of doping graphane, p and n regions can be defined so that 2D p-n junctions become feasible with small reverse currents. This paper introduces a basic analysis to obtain current-voltage characteristics of such a 2D p-n junction based on graphane. As we show, within the approximation of Shockley law of junctions, an ideal I-V charactristic for this p-n junction is to be expected.
@article{arxiv.0905.2812,
title = {Current-Voltage Characteristics of Graphane p-n Junctions},
author = {Behnaz Gharekhanlou and Sina Khorasani},
journal= {arXiv preprint arXiv:0905.2812},
year = {2010}
}