Accessing intrinsic properties of a graphene device can be hindered by the influence of contact electrodes. Here, we capacitively couple graphene devices to superconducting resonant circuits and observe clear changes in the resonance- frequency and -widths originating from the internal charge dynamics of graphene. This allows us to extract the density of states and charge relaxation resistance in graphene p-n junctions without the need of electrical contacts. The presented characterizations pave a fast, sensitive and non-invasive measurement of graphene nanocircuits.
@article{arxiv.1702.02071,
title = {Contact-less characterizations of encapsulated graphene p-n junctions},
author = {V. Ranjan and S. Zihlmann and P. Makk and K. Watanabe and T. Taniguchi and C. Schönenberger},
journal= {arXiv preprint arXiv:1702.02071},
year = {2017}
}