相关论文: Electronic Properties of Strained Si/Ge Core-Shell…
Nanowires are formed by indenting and subsequently retracting two pieces of sodium metal. Their cross-section gradually reduces upon retraction and the diameters can be obtained from the conductance. In previous work we have demonstrated…
Thin nanowires of silicon oxide were studied by pseudopotential density functional electronic structure calculations using the generalized gradient approximation. Infinite linear and zigzag Si-O chains were investigated. A wire composed of…
We investigated the atomic structures, Raman spectroscopic and electrical transport properties of individual graphene nanoribbons (GNRs, widths ~10-30 nm) derived from sonochemical unzipping of multi-walled carbon nanotubes (MWNTs).…
By means of a multiband effective mass Hamiltonian, a theoretical characterization of the effect of the geometrical features of the confinement profile --in particular, a longitudinal groove-- on the subbands dispersion and spin-related…
We consider holes confined to Ge/Si core/shell nanowires subject to strong Rashba spin-orbit interaction and screened Coulomb interaction. Such wires can, for instance, serve as host systems for Majorana bound states. Starting from a…
We investigate curvature effects on geometric parameters, energetics and electronic structure of zigzag nanotubes with fully optimized geometries from first-principle calculations. The calculated curvature energies, which are inversely…
In a zero-dimensional superconductor, quantum size effects(QSE) not only set the limit to superconductivity, but are also at the heart of new phenomena such as shell effects, which have been predicted to result in large enhancements of the…
The magnetic properties of Co (<D>=15 nm, <L>=130nm) nanowires are reported. In oxidized wires, we measure large exchange bias fields of the order of 0.1 T below T ~ 100 K. The onset of the exchange bias, between the ferromagnetic core and…
Using local scanning electrical techniques we study edge effects in side-gated Hall nanodevices made of epitaxial graphene. We demonstrate that lithographically defined edges of the graphene channel exhibit hole conduction within the narrow…
We have studied theoretically the effect of a tuneable lateral confinement on two-dimensional hole systems realised in III-V semiconductor heterostructures. Based on the 4x4 Luttinger description of the valence band, we have calculated…
Due to the strong quantum confinement effect, few-layer {\gamma}-InSe exhibits a layer-dependent bandgap, spanning the visible and near infrared regions, and thus recently draws tremendous attention. As a two-dimensional material, the…
We theoretically investigate the spin-orbit interaction of electrons confined in the outer regions of square core-shell nanowires. The polygonal cross section leads to the accumulation of low-energy electrons in the corners and the…
Particular strain geometry in graphene could leads to a uniform pseudo-magnetic field of order 10T and might open up interesting applications in graphene nano-electronics. Through quantum transport calculations of realistic strained…
Magnetotunneling spectroscopy was employed to probe the confinement in vertical Si/Ge double-barrier resonant tunneling diodes with regularly distributed Ge quantum dots. Their current-voltage characteristics reveal a step-like behavior in…
Pressure induced structural and electronic transitions of Se helical chains confined inside nano-channels are studied. Raman scattering and optical absorption experiments show strong evidence of band gap reduction under high pressure. Ab…
We predict enhanced electron-hole superfluidity in two coupled electron-hole armchair-edge terminated graphene nanoribbons separated by a thin insulating barrier. In contrast to graphene monolayers, the multiple subbands of the nanoribbons…
Graphene has shown impressive properties for nanoelectronics applications including a high mobility and a width-dependent bandgap. Use of graphene in nanoelectronics would most likey be in the form of graphene nanoribbons (GNRs) where the…
Low dimensional structures have demonstrated improved thermoelectric (TE) performance because of a drastic reduction in their thermal conductivity, {\kappa}l. This has been observed for a variety of materials, even for traditionally poor…
For semimetal nanowires with diameters smaller than a few tens of nanometers, a semimetal-to-semiconductor transition is observed as the emergence of an energy band gap resulting from quantum confinement. Quantum confinement in a semimetal…
We report on the hole mobility of ultra-narrow [110] Si channels as a function of the confinement length scale. We employing atomistic bandstructure calculations and linearized Boltzmann transport approach. The phonon-limited mobility of…