相关论文: New Schottky-gate Bipolar Mode Field Effect Transi…

A new fabrication technique is used to produce quantum dots with read-out channels in silicon/silicon-germanium two-dimensional electron gases. The technique utilizes Schottky gates, placed on the sides of a shallow etched quantum dot, to…

Conventional silicon bipolars are not suitable for low-temperature operation due to the deterioration of current gain ($\beta$). In this paper, we characterize lateral bipolar junction transistors (LBJTs) fabricated on silicon-on-insulator…

In this paper, a two-dimensional analytical model of a laterally graded-channel triple-metal double-gate Junctionless Field Effect Transistor with hetero dielectric gate oxide stack consisting of SiO$_2$ and HfO$_2$ is derived. The model…

Steep transistors are crucial in lowering power consumption of the integrated circuits. However, the difficulties in achieving steepness beyond the Boltzmann limit experimentally have hindered the fundamental challenges in application of…

Tunneling field-effect transistors (TFETs) have gained a great deal of recent interest due to their potential to reduce power dissipation in integrated circuits. One major challenge for TFETs so far has been achieving high drive currents,…

Because the conductivity of organic semiconductors is very low, a useful model for the organic diode consists of treating the organic layer as an insulator, an approximation often referred to as the metal-insulator-metal (MIM) model.…

A scheme is proposed to electrically measure the spin-momentum coupling in the topological insulator surface state by injection of spin polarized electrons from silicon. As a first approach, devices were fabricated consisting of thin…

We present detailed simulations addressing recent electronic interference experiments, where a metallic gate is used to locally modify the Fermi wave-length of the charge carriers. Our numerical calculations are based on a solution of the…

We investigate effect of a step-doping profile on the spin injection from a ferromagnetic metal contact into a semiconductor quantum well (QW) in spin FETs using a Monte Carlo model. The considered scheme uses a heavily doped layer at the…

Here, we propose a Charge Plasma (CP)-based Germanium Double Gate Tunnel Field-Effect Transistor (Ge-DGTFET) device structure, where a CP is induced in the heavily doped source region using the work function engineering of source electrode.…

We demonstrate ambipolar graphene field effect transistors individually controlled by local metal side gates. The side gated field effect can have on/off ratio comparable with that of the global back gate, and can be tuned in a large range…

Graphene field-effect transistors (GFETs) are among the most promising platforms for ultrasensitive chemical and biological sensing due to their high carrier mobility, large surface area, and low intrinsic noise. However, conventional…

Ferroelectric memristors have attracted much attention as a type of nonvolatile resistance switching memories in neuromorphic computing, image recognition, and information storage. Their resistance switching mechanisms have been studied…

In this article, we present a configurable field-effect transistor (FET), where not only polarity (n- and p-type), but the conduction mechanism of a FET can also be configured dynamically. As a result, we can have both types of devices,…

We present the first spintronic semiconductor field effect transistor. The injector and collector contacts of this device were made from magnetic permalloy thin films with different coercive fields so that they could be magnetized either…

We develop a Monte Carlo model to study injection of spin-polarized electrons through a Schottky barrier from a ferromagnetic metal contact into a non-magnetic low-dimensional semiconductor structure. Both mechanisms of thermionic emission…

We have studied the finite bias transport properties of a 2H-1T' MoS$_2$ lateral metal-semiconductor (M-S) junction by non-equilibrium Green's functions calculations, aimed at contacting the 2D channel in a field effect transistor. Our…

Metal-semiconductor interfaces, known as Schottky junctions, have long been hindered by defects and impurities. Such imperfections dominate the electrical characteristics of the junction by pinning the metal Fermi energy. We report…

We experimentally demonstrate a Si spin metal-oxide-semiconductor field-effect transistor (MOSFET) that exhibits a high on/off ratio of source-drain current and spin signals at room temperature. The spin channel is non-degenerate n-type Si,…

In this paper, we demonstrate that the performance of silicon Schottky rectifiers on SOI can be significantly improved using a Lateral Dual Sidewall Schottky (LDSS) concept. Our results based on numerical simulation show that the LDSS…