相关论文: Extended-p+ Stepped Gate (ESG) LDMOS for Improved …

In this work, we have demonstrated a novel method to increase the electro-optic interaction in an intensity modulator at the C-band by optimizing the growth methodology of PZT with the metal (Ti/Pt) as a base material and the PZT poling…

We report the fabrication and operation of a source-drain-gate three-terminal field-effect electronic device with an electron mobility exceeding $40\times 10^6$ cm$^2$ / (Vs). Several devices were fabricated, with the highest achieved…

Gate oxide degradation is more critical in Silicon-Carbide (SiC) MOSFETs than in Silicon (Si) MOSFETs. This is because of the smaller gate oxide thickness and the higher electric field that develops across the gate oxide in SiC MOSFETs.…

Silicon metal-oxide-semiconductor (MOS) spin qubits have become a promising platform for quantum information processing, with recent demonstrations of high-fidelity single and two-qubit gates. To move beyond a few qubits, however, more…

We report an accelerated laser phase diffusion quantum entropy source with all non-laser optical and optoelectronic elements implemented in silicon photonics. The device uses efficient and robust single-laser accelerated phase diffusion…

The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In0.53Ga0.47As channel and atomic-layer-deposited (ALD) Al2O3/WN gate stacks by a top-down approach. A well-controlled InGaAs…

We developed a hydrodynamic model of plasmonic crystals formed in the current-driven grating gate transistor structures. The model demonstrates that the quality factor of plasmonic resonances could be increased by using ungated regions with…

We design the phase shifts of an intelligent reflecting surface (IRS)-assisted single-input-multiple-output communication system to minimize the outage probability (OP) and to maximize the ergodic rate. Our phase shifts design uses only…

The complementary field-effect transistors (CFETs), featuring vertically stacked n/p-FETs, enhance integration density and significantly reduce the area of standard cells such as static random-access memory (SRAM). However, the advantage of…

The Large Hadron Collider (LHC) at CERN is expected to be upgraded to the High-Luminosity LHC (HL-LHC) by 2029 and achieve instantaneous luminosity around 5 - 7.5 $\times$ 10$^{34}$cm$^{-2}$ s$^{-1}$. This represents a more than 3-4 fold…

We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate…

A new approach to suppress ion backflow in multi-GEM structures is suggested. In this approach, the potential difference applied across the gap between two adjacent GEMs is reversed compared to the standard configuration. In such a gap…

This paper presents a spatial-temporal single harmonic switching (STHS) transmitter array architecture with enhanced efficiency in the power back-off (PBO) region. STHS is an electromagnetic and circuit co-designed and jointly optimized…

Compared to traditional electromagnetic stealth (ES) materials, which are effective only within specific frequencies and orientations, intelligent reflecting surface (IRS) technology introduces a novel paradigm for achieving dynamic and…

Emerging applications in the IoT domain require ultra-low-power and high-performance end-nodes to deal with complex near-sensor-data analytics. Domains such as audio, radar, and Structural Health Monitoring require many computations to be…

Semi-supervised video object segmentation (VOS) has been largely driven by space-time memory (STM) networks, which store past frame features in a spatiotemporal memory to segment the current frame via softmax attention. However, STM…

We present the test results of a low jitter Phase Locked Loop (PLL) prototype chip for the CMS Endcap Timing Layer readout chip (ETROC). This chip is based on the improved version of a clock synthesis circuit named ljCDR from the Low-Power…

The prototype of time digitizing system for the upgrade of BESIII endcap TOF (ETOF) is introduced in this paper. The ETOF readout electronics has a formation of distributed architecture that hit signal from multi-gap resistive plate chamber…

The paper presents simulation study of thin ferroelectrics (Si doped HfO2, PZT) PGP FDSOI NCFETs at circuit level for high performance, low VDD low-power digital circuits. The baseline PGP FDSOI MOSFET has 20 nm metal gate length with…

Localized surface plasmons (LSPs) have played a significant role in improving the light emission efficiency of light emitting diodes (LEDs). In this report, polygonal nanoholes have been fabricated in the p-GaN layer of InGaN-based LEDs by…