相关论文: Extended-p+ Stepped Gate (ESG) LDMOS for Improved …

This paper proposes a new hardware accelerator for sparse convolutional neural networks (CNNs) by building a hardware unit to perform the Image to Column (IM2COL) transformation of the input feature map coupled with a systolic array-based…

In this paper, we demonstrate that the performance of silicon Schottky rectifiers on SOI can be significantly improved using a Lateral Dual Sidewall Schottky (LDSS) concept. Our results based on numerical simulation show that the LDSS…

Thickness engineered tunneling field-effect transistors (TE-TFET) as a high performance ultra-scaled steep transistor is proposed. This device exploits a specific property of 2D materials: layer thickness dependent energy bandgap (Eg).…

The electrohydrodynamic (EHD) force produced by ions ejected from a corona plasma is a solid state, silent mechanism for accelerating air, useful for applications ranging from electronics cooling to flying microrobots. This paper presents…

Here, we propose a Charge Plasma (CP)-based Germanium Double Gate Tunnel Field-Effect Transistor (Ge-DGTFET) device structure, where a CP is induced in the heavily doped source region using the work function engineering of source electrode.…

In recent years, great progress has been made in the Lift-Splat-Shot-based (LSS-based) 3D object detection method. However, inaccurate depth estimation remains an important constraint to the accuracy of camera-only and multi-model 3D object…

Doubly enhanced third harmonic generation (THG) is realized by the electric dipole resonance (EDR) in silicon nanodisks placed onto a metallic film at near-infrared. By introducing the metal substrate, the perfect electric conductor (PEC)…

The steered response power phase transform (SRP-PHAT) is a beamformer method very attractive in acoustic localization applications due to its robustness in reverberant environments. This paper presents a spatial grid design procedure,…

Advanced Encryption Standard (AES) implementations on Field Programmable Gate Arrays (FPGA) commonly focus on maximizing throughput at the cost of utilizing high volumes of FPGA slice logic. High resource usage limits systems' abilities to…

This paper introduces the novel Droop-e grid-forming power electronic converter control strategy, which establishes a non-linear, active power--frequency droop relationship based on an exponential function of the power output. A primary…

Heterosubstrates have been extensively studied as a method to improve the heat dissipation of Ga$_{2}$O$_{3}$ devices. In this simulation work, we propose a novel role for $p$-type available heterosubstrates, as a component of a reduced…

In this work, we investigate the effect of decomposition basis on primitive qudit gates on superconducting radio-frequency cavity-based quantum computers with applications to lattice gauge theory. Three approaches are tested: SNAP &…

The many cores design research community have shown high interest in optical crossbars on chip for more than a decade. Key properties of optical crossbars, namely a) contention-free data routing b) low-latency communication and c) potential…

High performance InGaAs gate-all-around (GAA) nanowire MOSFETs with channel length (Lch) down to 20nm have been fabricated by integrating a higher-k LaAlO3-based gate stack with an equivalent oxide thickness of 1.2nm. It is found that…

Understanding the mechanism and developing strategies toward efficient electrocatalysis at gas-liquidsolid interfaces are important yet challenging. In the past decades, researchers have devoted many efforts to improving catalyst activity…

NAND flash-based Solid State Drives (SSDs), which are widely used from embedded systems to enterprise servers, are enhancing performance by exploiting the parallelism of NAND flash memories. To cope with the performance improvement of SSDs,…

The correlated electron system SmNiO3 exhibits a metal-insulator phase transition at 130 {\deg}C. Using an ionic liquid as an electric double layer (EDL) gate on three-terminal ultrathin SmNiO3 devices, we investigate gate control of the…

This paper describes a CMOS analogy voltage supper buffer designed to have extremely low static current Consumption as well as high current drive capability. A new technique is used to reduce the leakage power of class-AB CMOS buffer…

Recently, short channel effects (SCE) and power consumption dissipation problems pose big challenges which need imperative actions to be taken to deal with for field effect transistor to further scale down as semiconductor technology enters…

We report thin-film InAs/GaAs quantum dot (QD) solar cells with $n-i-p{+}$ deep junction structure and planar back reflector fabricated by epitaxial lift-off (ELO) of full 3-inch wafers. External quantum efficiency measurements demonstrate…