相关论文: Intrinsic and dopant enhanced solid phase epitaxy …
We theoretically study the stability of the solidified second-layer 3He at 4/7 of the first-layer density adsorbed on graphite, which exhibits quantum spin liquid. We construct a lattice model for the second-layer 3He by taking account of…
Kagome metals are topological materials with a rich phase diagram featuring various charge density wave orders and even unconventional superconductivity. However, little is still known about possible spin-polarized responses in these…
Fe$_{5-x}$GeTe$_2$ is a promising two-dimensional (2D) van der Waals (vdW) magnet for practical applications, given its magnetic properties. These include Curie temperatures above room temperature, and topological spin textures (TST or both…
Indium incorporation and surface morphology of InAlN layers grown on (0001)GaN by plasma-assisted molecular beam epitaxy were investigated as a function of the impinging In flux and the substrate temperature in the 450-610$^{\circ}$C range.…
A combined experimental and theoretical study of doping individual Fe atoms into Bi2Se3 is presented. It is shown through a scanning tunneling microscopy study that single Fe atoms initially located at hollow sites on top of the surface…
We present photo-electron paramagnetic resonance (EPR) measurements and first-principles calculations that indicate germanium (Ge) is a DX-center in AlGaN. Our photo-EPR measurements on Ge-doped AlGaN samples show no EPR spectra in the…
In this systematic density functional theory study, we compare a standard gradient corrected functional (PBE) with a long-range hybrid functional (HSE06), with and without correction for the dispersion forces, relatively to their ability to…
We identify the multi-layered compound GeBi4Te7 to be a topological insulator with a freestanding Dirac point, slightly above the valence band maximum, using angle-resolved photoemission spectroscopy (ARPES) measurements. The spin…
Under hydrostatic pressure, alpha-quartz undergoes solid-state mechanical amorphization wherein the interpenetration of SiO4 tetrahedra occurs and the material loses crystallinity. This phase transformation requires a high hydrostatic…
Several ten $\mu$m GaN have been deposited on a silicon substrate using a two-step hydride vapor phase epitaxy (HVPE) process. The substrates have been covered by AlN layers and GaN nanostructures grown by plasma-assisted molecular-beam…
We have investigated by spectroscopic ellipsometry (SE, 190-1700 nm) the optical properties of uniform, amorphous thin films of Ta2O5 and Nb2O5 as deposited and after annealing, and after so-called "doping" with Ti atoms which leads to…
First simulations of deuterium shattered pellet injection (SPI) into an ASDEX Upgrade H-Mode plasma with the JOREK MHD code are presented. Resistivity is increased by one order of magnitude in most simulations to reduce computational costs…
We analyze Ge-related defects in Ge-doped SiO_2 using first-principles density functional techniques. Ge is incorporated at the level of ~ 1 mol % and above. The growth conditions of Ge:SiO_2 naturally set up oxygen deficiency, with vacancy…
Interest in the superconducting proximity effect has recently been reignited by theoretical predictions that it could be used to achieve topological superconductivity. Low-T$_{c}$ superconductors have predominantly been used in this effort,…
A room-temperature infrared spectroscopy study of elemental tellurium at pressures up to 8.44 GPa in the energy range 0.015-2 eV is reported. Optical signatures of the high-pressure polymorphs are investigated and compared to the results of…
Narrow gap semiconductor Pb$_{1-x}$Sn$_{x}$Se was investigated for topologically protected surface states in its rock-salt structural phase for x=0.45, 0.23, 0.15, and 0. Angle-resolved photoelectron spectroscopy of intrinsically p-doped…
We have observed superconductivity in heavy p-doped Ge by measuring of differential resistance dV/dI(V) of Ge - PtIr point contacts. The superconducting (SC) features disappear above 6 K or above 1 T, what can be taken as the critical…
In this study, high-quality thin films of the topological semimetal phase NiTe$_2$ were prepared using molecular beam epitaxy (MBE) technique, confirmed through X-ray diffraction with pronounced Laue oscillations. Electrical transport…
The high Tc superconductor FeTe0.55Se0.45 has recently been shown to support a surface state with topological character. Here we use low-energy laser-based ARPES with variable light polarization, including both linear and circular…
We report on molecular beam epitaxy and properties of a magnetic topological insulator, Cr doped Sb2Te3. The composition analysis reveals that Cr replaces Sb site, and x-ray diffraction confirms that single phase textured crystal structure…