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相关论文: Tuning carrier type and density in Bi2Se3 by Ca-do…

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The electronic and magnetic properties of iron-doped topological insulator Bi1.84-xFe0.16CaxSe3 single crystals were studied. By co-doping Fe and Ca atoms, ferromagnetic bulk states with different carrier density (from n-type to p-type)…

材料科学 · 物理学 2013-02-05 H. Li , Y. R. Song , Meng-Yu Yao , Fengfeng Zhu , Canhua Liu , C. L. Gao , Jin-Feng Jia , Dong Qian , X. Yao , Y. J. Shi , D. Wu

By eliminating normal fabrication processes, we preserve the bulk insulating state of calcium-doped Bi2Se3 single crystals in suspended nanodevices, as indicated by the activated temperature dependence of the resistivity at low…

介观与纳米尺度物理 · 物理学 2015-06-04 Peng Wei , Zhiyong Wang , Xinfei Liu , Vivek Aji , Jing Shi

We show that by Ca-doping the Bi2Se3 topological insulator, the Fermi level can be fine tuned to fall inside the band gap and therefore suppress the bulk conductivity. Non-metallic Bi2Se3 crystals are obtained. On the other hand, the Bi2Se3…

强关联电子 · 物理学 2015-05-19 Y. S. Hor , J. G. Checkelsky , D. Qu , N. P. Ong , R. J. Cava

With a large band gap and a single Dirac cone responsible for the topological surface states, Bi2Se3 is widely regarded as a prototypical 3D topological insulator. Further applications of the bulk material has, however, been hindered by…

材料科学 · 物理学 2023-06-02 Rodrigo T. Paulino , Marcos A. Avila

We present a study of the structural and electronic properties of highly doped topological insulator Bi2Se3 single crystals synthesized by the Bridgman method. Lattice structural characterizations by X-ray diffraction, scanning tunneling…

材料科学 · 物理学 2012-12-07 Helin Cao , Suyang Xu , Ireneusz Miotkowski , Jifa Tian , Deepak Pandey , M. Zahid Hasan , Yong P. Chen

The growth and elementary properties of p-type Bi2Se3 single crystals are reported. Based on a hypothesis about the defect chemistry of Bi2Se3, the p-type behavior has been induced through low level substitutions (1 percent or less) of Ca…

We theoretically investigate the possibility of establishing ferromagnetism in the topological insulator Bi2Se3 via magnetic doping of 3d transition metal elements. The formation energies, charge states, band structures, and magnetic…

材料科学 · 物理学 2013-01-08 Jian-Min Zhang , Wenguang Zhu , Ying Zhang , Di Xiao , Yugui Yao

Manipulating carrier density through gate effects, both in electrostatic charge storage and electrochemical intercalation mode, offers powerful control over material properties, although commonly restricted to ultra-thin films or van der…

Combining the ability to prepare high-quality, intrinsic Bi$_2$Te$_3$ topological insulator thin films of low carrier density with in-situ protective capping, we demonstrate a pronounced, gate-tunable change in transport properties of…

介观与纳米尺度物理 · 物理学 2016-07-04 Prosper Ngabonziza , Martin P. Stehno , Hiroaki Myoren , Viola A. Neumann , Gertjan Koster , Alexander Brinkman

We report the effect of Sn doping on the transport properties of the topological insulator Bi_{2}Te_{2}Se studied in a series of Bi_{2-x}Sn_{x}Te_{2}Se crystals with 0 \leq x \leq 0.02. The undoped stoichiometric compound (x = 0) shows an…

材料科学 · 物理学 2015-06-04 Zhi Ren , A. A. Taskin , Satoshi Sasaki , Kouji Segawa , Yoichi Ando

Structural, resistivity, thermoelectric power and magneto-transport properties of Cu doped Bi2Te3 topological insulators have been investigated. The occurrence of the tuning of charge carriers from n type to p type by Cu doping at Te sites…

Achieving true bulk insulating behavior in Bi$_2$Se$_3$, the archetypal topological insulator with a simplistic one-band electronic structure and sizable band gap, has been prohibited by a well-known self-doping effect caused by selenium…

材料科学 · 物理学 2017-01-19 Paul Syers , Johnpierre Paglione

Monolayer epitaxial graphene (EG) grown on hexagonal Si-terminated SiC substrates is intrinsically electron-doped (carrier density is about 10^13 cm^(-2)). We demonstrate a clean device fabrication process using a precious-metal protective…

Bismuth selenide Bi$_2$Se$_3$ was grown by molecular beam epitaxy while carrier density and mobility were measured directly \emph{in situ} as a function of film thickness. Carrier density shows high interface n-doping (1.5 x 10$^{13}$…

There is an ongoing debate about the relative importance of structural change versus doping charge carriers on the mechanism of superconductivity in Fe-based materials. Elucidating this issue is a major challenge since it would require a…

Bi2Te3 based thermoelectric devices typically use a nickel layer as a diffusion barrier to block the diffusion of solder or copper atoms from the electrode into the thermoelectric material. Previous studies have shown degradation in the…

材料科学 · 物理学 2012-12-05 Kevin C. Lukas , Weishu Liu , Zhifeng Ren , Cyril P. Opeil

Carrier-independent ferromagnetism of chromium doped topological insulator $Bi_xSb_{2-x}Te_3$ thin films,which cannot be explained by current theory of dilute magnetic semiconductor, has been reported recently. To study if it is related to…

材料科学 · 物理学 2015-06-05 Bin Li , Qingyan Fan , Fuhao Ji , Zhen Liu , Hong Pan , S. Qiao

We measure the temperature-dependent carrier density and resistivity of the topological surface state of thin exfoliated Bi2Se3 in the absence of bulk conduction. When the gate-tuned chemical potential is near or below the Dirac point the…

Superconducting CuxBi2Se3 has attracted significant attention as a candidate topological superconductor. Besides inducing superconductivity, the introduction of Cu atoms to this material has also been observed to produce a number of unusual…

We report a transport study of exfoliated few monolayer crystals of topological insulator Bi$_2$Se$_3$ in an electric field effect (EFE) geometry. By doping the bulk crystals with Ca, we are able to fabricate devices with sufficiently low…

介观与纳米尺度物理 · 物理学 2011-06-21 J. G. Checkelsky , Y. S. Hor , R. J. Cava , N. P. Ong
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