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相关论文: Negative Differential Resistivity from Holography

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Nonlinear electrical properties, such as negative differential resistance (NDR), are essential in numerous electrical circuits, including memristors. Several physical origins have been proposed to lead to the NDR phenomena in semiconductor…

Combining insights from quantum chemistry calculations with master equations, we discuss a mechanism for negative differential resistance (NDR) in molecular junctions, operated in the regime of weak tunnel coupling. The NDR originates from…

介观与纳米尺度物理 · 物理学 2013-01-10 Martin Leijnse , Wei Sun , Mogens Brøndsted Nielsen , Per Hedegård , Karsten Flensberg

We clarify the mechanism for negative differential conductivity in holographic conductors. Negative differential conductivity is a phenomenon in which the electric field decreses with the increase of the current. This phenomenon is widely…

高能物理 - 理论 · 物理学 2020-12-24 Shuta Ishigaki , Shin Nakamura

We propose and demonstrate through first-principles calculation a new spin-dependent negative differential resistance (NDR) mechanism in magnetic tunnel junctions (MTJ) with cubic cation disordered crystals (CCDC) AlO$_x$ or…

材料科学 · 物理学 2016-05-25 Jun Jiang , X. -G. Zhang , X. F. Han

Transport in photoactive graphene heterostructures, originating from the dynamics of photogenerated hot carriers, is governed by the processes of thermionic emission, electron-lattice thermal imbalance and cooling. These processes give rise…

介观与纳米尺度物理 · 物理学 2015-04-15 J. F. Rodriguez-Nieva , M. S. Dresselhaus , L. S. Levitov

A decrease in current with increasing voltage, often referred to as negative differential resistance (NDR), has been observed in many electronic devices and can usually be understood within a one-electron picture. However, NDR has recently…

介观与纳米尺度物理 · 物理学 2009-11-13 Bhaskaran Muralidharan , Supriyo Datta

Motivated by recent experiments, we have studied transport behavior of coupled quantum dot systems in the Coulomb blockade regime using the master (rate) equation approach. We explore how electron-electron interactions in a donor-acceptor…

介观与纳米尺度物理 · 物理学 2009-11-13 Prakash Parida , S Lakshmi , Swapan K Pati

Hexagonal boron nitride (hBN) is drawing increasing attention as an insulator and substrate material to develop next generation graphene-based electronic devices. In this paper, we investigate the quantum transport in heterostructures…

介观与纳米尺度物理 · 物理学 2015-06-30 Y. Zhao , Z. Wan , X. Xu , S. R. Patil , U. Hetmaniuk , M. P. Anantram

Negative differential resistance (NDR) behavior observed in several transition metal oxides is crucial for developing next-generation memory devices and neuromorphic computing systems. NbO2-based memristors exhibit two regions of NDR at…

介观与纳米尺度物理 · 物理学 2024-11-12 Nitin Kumar , Jong E. Han , Karsten Beckmann , Nathaniel Cady , G. Sambandamurthy

A new mechanism is proposed to explain the origin of negative differential resistance (NDR) in a strongly coupled single molecule-metal junction. A first-principles quantum transport calculation in a Fe-terpyridine linker molecule…

介观与纳米尺度物理 · 物理学 2009-11-13 Ranjit Pati , Mike McClain , Anirban Bandyopadhyay

A negative differential resistance (NDR) in the nanotransport is often ascribed to electron correlations. We present a simple example which demonstrates that finite electrode bandwidths and energy dependent electrode density of states are…

介观与纳米尺度物理 · 物理学 2010-05-12 Ioan Baldea , Horst Koppel

We study real-time dynamics of a charge carrier introduced into undoped Mott insulator propagating under a constant electric field F on the t-J ladder and square lattice. We calculate quasistationary current. In both systems adiabatic…

强关联电子 · 物理学 2011-05-10 Marcin Mierzejewski , Lev Vidmar , Janez Bonca , Peter Prelovsek

We theoretically investigate negative differential resistance (NDR) for ballistic transport in semiconducting armchair graphene nanoribbon (aGNR) superlattices (5 to 20 barriers) at low bias voltages V_SD < 500 mV. We combine the graphene…

介观与纳米尺度物理 · 物理学 2011-11-11 Gerson J. Ferreira , Michael N. Leuenberger , Daniel Loss , J. Carlos Egues

Negative differential resistance (NDR) with room temperature peak-valley-ratio of 8 has been observed in a ballistic field-effect-transistor (FET) based on graphene, having an oblique top gate. Graphene FETs with a top gate inclination…

介观与纳米尺度物理 · 物理学 2015-06-19 Mircea Dragoman , Adrian Dinescu , Daniela Dragoman

We investigate the atomic-scale tunneling characteristics of bilayer graphene on silicon carbide using the scanning tunneling microscopy. The high-resolution tunneling spectroscopy reveals an unexpected negative differential resistance…

We determine the conditions in which negative differential resistance (NDR) appears in the C$_{60}$-based molecular device of [Phys. Rev. Lett. {\bf 100}, 036807 (2008)] by means of ab-initio electron-transport simulations. Our calculations…

介观与纳米尺度物理 · 物理学 2015-03-17 Frederico D. Novaes , Manuel Cobian , Alberto Garcia , Pablo Ordejon , Hiromu Ueba , Nicolas Lorente

The effect of electric field, applied on systems in the nanoscale regime has attracted a lot of research in recent times. We highlight some of the recent results in the field of single molecule electronics and then move on to focus on some…

材料科学 · 物理学 2008-10-11 S. Lakshmi , Sudipta Dutta , Swapan K. Pati

We theoretically investigate negative differential resistance (NDR) of massless and massive Dirac Fermions in double barrier resonant tunneling diodes based on sufficiently short and wide graphene strips. The current-voltage characteristics…

介观与纳米尺度物理 · 物理学 2013-03-12 Yu Song , Han-Chun Wu , Yong Guo

We present the multilevel fabrication and measurement of a Coulomb-blockade device displaying tunable negative differential resistance (NDR). Applications for devices displaying NDR include amplification, logic, and memory circuits. Our…

介观与纳米尺度物理 · 物理学 2009-10-31 C. P. Heij , D. C. Dixon , P. Hadley , J. E. Mooij

We demonstrate, based on low-temperature scanning tunneling microscopy (STM) and spectroscopy, a pronounced negative differential resistance (NDR) in spin-crossover (SCO) molecular devices, where a Fe$^{\text{II}}$ SCO molecule is deposited…

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