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相关论文: Negative Differential Resistivity from Holography

200 篇论文

We have studied the transport properties of a molecular device composed of donor and acceptor moieties between two electrodes on either side. The device is considered to be one-dimensional with different on-site energies and the…

介观与纳米尺度物理 · 物理学 2016-08-31 S. Lakshmi , Swapan K. Pati

We present a model to describe the nonlinear response to a direct dc current applied to a two-dimensional electron system in a strong magnetic field. The model is based on the solution of the von Neumann equation incorporating the exact…

介观与纳米尺度物理 · 物理学 2010-09-21 A. Kunold , M. Torres

Negative differential conductivity (NDC) is a widely exploited effect in modern electronic components. Here, a proof-of-principle is given for the observation of NDC in a quantum transport device for neutral atoms employing a multi-mode…

量子气体 · 物理学 2017-08-24 Ralf Labouvie , Bodhaditya Santra , Simon Heun , Sandro Wimberger , Herwig Ott

Current-controlled (also known as "S-type") negative differential resistance (NDR) is of crucial importance to many emerging applications including neuromorphic computing and high-density memristors integration. However, the experimental…

介观与纳米尺度物理 · 物理学 2019-01-23 Miao Wang , Chengyu Wang , Chenchen Wu , Qiao Li , Chen Pan , Cong Wang , Shi-Jun Liang , Feng Miao

In this work, we clarify the physical mechanism for the phenomenon of negative output differential resistance (NDR) in short-channel graphene FETs (GFETs) through non-equilibrium Green's function (NEGF) simulations and a simpler…

介观与纳米尺度物理 · 物理学 2012-12-27 Roberto Grassi , Tony Low , Antonio Gnudi , Giorgio Baccarani

Active memristor elements, also called neuristors, are self-oscillating devices that are very good approximations to biological neuronal functionality and are crucial to the development of low-power neuromorphic hardware. Materials that…

应用物理 · 物理学 2023-03-17 Upanya Khandelwal , Qikai Guo , Beatriz Noheda , Pavan Nukala , Saurabh Chandorkar

Negative differential resistance (NDR) is tuned at junctions of electronically different dimer and trimer of Rose Bengal on an atomic flat gold (111) surface. Isolated molecule did not show any NDR. But it was induced to show double NDR…

介观与纳米尺度物理 · 物理学 2015-06-25 Anirban Bandyopadhyay , Y. Wakayama

Gunn (or Gunn-Hilsum) Effect and its associated negative differential resistivity (NDR) emanates from transfer of electrons between two different energy bands in a semiconductor. If applying a voltage (electric field) transfers electrons…

介观与纳米尺度物理 · 物理学 2018-05-01 Daryoush Shiri , Amit Verma , Reza Nekovei , Andreas Isacsson , C. R. Selvakumar , M. P. Anantram

Metal-based electronics is attractive for fast and radiation-hard electronic circuits and remains one of the longstanding goals for researchers. The emergence of 1T-TaS$_2$, a layered material exhibiting strong charge density wave (CDW)…

介观与纳米尺度物理 · 物理学 2020-08-12 Mehak Mahajan , Kausik Majumdar

Two-dimensional (2D) semiconductors have emerged as leading candidates for the development of low-power and multifunctional computing applications, thanks to their qualities such as layer-dependent band gap tunability, high carrier…

Negative differential thermal resistance (NDTR) can be generated for any one-dimensional heat flow with a temperature-dependent thermal conductivity. In a system-independent scaling analysis, the general condition for the occurrence of NDTR…

介观与纳米尺度物理 · 物理学 2015-06-18 Ho-Kei Chan , Dahai He , Bambi Hu

The negative differential resistance (NDR) response of Nb/NbOx/Pt cross-point devices is shown to have a polarity dependence due to the effect of the metal/oxide Schottky barriers on the contact resistance. Three distinct responses are…

Negative differential thermal resistance (NDTR) in approximate graphene nanoribbons (GNRs) is investigated from one dimension to three dimensions by using classical molecular dynamics method. For single-layer GNRs, NDTR can not be observed…

介观与纳米尺度物理 · 物理学 2014-07-29 Bao-quan Ai , Wei-rong Zhong , Bambi Hu

The conductive characteristics of Bi0.9La0.1Fe0.96Mg0.04O3(BLFM) thin film are investigated at various temperatures and a negative differential resistance (NDR) is observed in the thin film, where a leakage current peak occurs upon…

材料科学 · 物理学 2015-06-04 Qingqing Ke , Amit Kumar , Xiaojie Lou , Kaiyang Zeng , John Wang

We investigate thermal transport in a two segment classical Heisenberg spin chain with nearest neighbor interaction and in presence of external magnetic field using computer simulation. The system is thermally driven by heat baths attached…

统计力学 · 物理学 2013-11-11 Debarshee Bagchi

We report two examples of transport phenomena based on sharp features in the effective density of states of molecular-scale transistors: Kondo physics in C$_{60}$-based devices, and gate-modulated negative differential resistance (NDR) in…

介观与纳米尺度物理 · 物理学 2007-05-23 L. H. Yu , D. Natelson

Two-dimensional (2D) crystals, such as graphene, hexagonal boron nitride and transitional metal dichalcogenides, have attracted tremendous amount of attention over the past decade due to their extraordinary thermal, electrical and optical…

材料科学 · 物理学 2017-02-16 Y. Zhao , Z. Wan , U. Hetmaniuk , M. P. Anantram

Down-scaling device dimensions to the nanometer range raises significant challenges to traditional device design, due to potential current leakage across nanoscale dimensions and the need to maintain reproducibility while dealing with…

介观与纳米尺度物理 · 物理学 2019-01-03 Zhongcan Xiao , Chuanxu Ma , Jingsong Huang , Liangbo Liang , Wenchang Lu , Kunlun Hong , Bobby G. Sumpter , An-Ping Li , J. Bernholc

Multipeak negative differential resistance (NDR) molecular devices are designed from first principles. The effect of NDR is associated with the non-linear Stark shifts and the electron localization within the conductive region and contacts.…

介观与纳米尺度物理 · 物理学 2015-01-07 Mikolaj Sadek , Malgorzata Wierzbowska , Michal F. Rode , Andrzej L. Sobolewski

We show that Joule heating causes current-controlled negative differential resistance (CC-NDR) in TiO2 by constructing an analytical model of the voltage-current V(I) characteristic based on polaronic transport for Ohm's Law and Newton's…

介观与纳米尺度物理 · 物理学 2015-05-30 A. S. Alexandrov , A. M. Bratkovsky , B. Bridle , S. E. Savel'ev , D. B. Strukov , R. Stanley Williams