相关论文: Impact of heavy hole-light hole coupling on optica…

In photoluminescence spectra of symmetric [111] grown GaAs/AlGaAs quantum dots in longitudinal magnetic fields applied along the growth axis we observe in addition to the expected bright states also nominally dark transitions for both…

Spintronics, quantum computing and quantum communication science utilizing cubic semiconductors rely largely on the properties of the hole states, composed of light and heavy hole wavefunction components. The admixture of light-hole (LH)…

This paper presents an overview and perspectives on the epitaxial growth and optical properties of GaAs quantum dots obtained with the droplet etching method as high-quality sources of quantum light. We illustrate the recent achievements…

Quantum dots are arguably one of the best platforms for optically accessible spin based qubits. The paramount demand of extended qubit storage time can be met by using quantum-dot-confined dark exciton: a longlived electron-hole pair with…

We present a microscopic theory of the magnetic field induced mixing of heavy-hole states +/- 3/2 in GaAs droplet dots grown on (111)A substrates. The proposed theoretical model takes into account the striking dot shape with trigonal…

When the coupling between light and matter becomes comparable to the energy gap between different excited states they hybridize, leading to the appearance of a rich and complex phenomenology which attracted remarkable interest in recent…

Excitons confined to flat semiconductor quantum dots with elliptical cross section are considered as we study geometrical effects on exciton binding energy, electron-hole separation, and the resulting linear optical properties. We use…

The effect of quantum dot shape on the hole energy spectrum and optical properties caused by the interlevel charge transition based on the 4x4 Hamiltonian has been studied for the GaAs quantum dot in the AlAs semiconductor matrix.…

We report the fabrication and photoluminescence properties of laterally-coupled GaAs/AlGaAs quantum dots. The coupling in the quantum dot molecules is tuned by an external electric field. An intricate behavior, consisting of spectral line…

A sequence of photoluminescence spectroscopy based methods are used to rigorously identify and study all the main spectral features (more than thirty emission lines) of site controlled InGaAs/AlGaAs quantum dots (QDs) grown along [111]B in…

The electronic and optical properties of self-assembled InN/GaN quantum dots (QDs) are investigated by means of a tight-binding model combined with configuration interaction calculations. Tight-binding single particle wave functions are…

We fabricated GaAs/AlGaAs quantum dots by droplet epitaxy method, and obtained the geometries of the dots from scanning transmission electron microscopy data. Post-thermal annealing is essential for the optical activation of quantum dots…

We report the direct observation of coupling between a single self-assembled InAs quantum dot and a wetting layer, based on strong diamagnetic shifts of many-body exciton states using magneto-photoluminescence spectroscopy. An extremely…

Several semiconductor quantum dot techniques have been investigated for the generation of entangled photon pairs. Among the other techniques, droplet epitaxy enables the control of the shape, size, density, and emission wavelength of the…

We conduct a combined experimental and theoretical study of the quantum-confined Stark effect in GaAs/AlGaAs quantum dots obtained with the local droplet etching method. In the experiment, we probe the permanent electric dipole and…

We present a combined experimental and theoretical study of highly charged and excited electron-hole complexes in strain-free (111) GaAs/AlGaAs quantum dots grown by droplet epitaxy. We address the complexes with one of the charge carriers…

We discuss the spectral lineshapes of N quantum dots in strong coupling with the single mode of a microcavity. Nontrivial features are brought by detuning the emitters or probing the direct exciton emission spectrum. We describe dark…

In this paper we report on the optical properties of site controlled InGaAs dots with GaAs barriers grown in pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an ensemble of…

The effect of Gamma-X mixing on the energy levels fine structure of indirect in k-space excitons in an ensemble of (In,Al)As/AlAs quantum dots with type I band alignment was experimentally studied. Using the methods of optical spin…

We theoretically study the effects of bias-controlled interdot tunneling in vertically coupled quantum dots on the emission properties of spin excitons in various bias-controlled tunneling regimes. As a main result, for strongly coupled…