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相关论文: Ambipolar Electric Field Effect in Metallic Bi2Se3

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We report a transport study of ultrathin Bi2Se3 topological insulators with thickness from one quintuple layer to six quintuple layers grown by molecular beam epitaxy. At low temperatures, the film resistance increases logarithmically with…

The article comprises structural, microstructural, and physical properties analysis of Bi2Se3-xTex (x= 0, 1, 2 and 3) mixed topological insulator (MTI) single crystals. All the crystals were grown through a well-optimized solid-state…

材料科学 · 物理学 2020-12-02 Deepak Sharma , Yogesh Kumar , P. Kumar , Vipin Nagpal , S. Patnaik , V. P. S. Awana

The archetypical 3D topological insulators Bi2Se3, Bi2Te3 and Sb2Te3 commonly exhibit high bulk conductivities, hindering the characterization of the surface state charge transport. The optimally doped topological insulators Bi2Te2Se and…

Bi$_2$Te$_3$ is a topological insulator whose unique properties result from topological surface states in the band gap. The neutralization of scattered low energy Na$^+$, which is sensitive to dipoles that induce inhomogeneities in the…

介观与纳米尺度物理 · 物理学 2018-02-14 Weimin Zhou , Haoshan Zhu , Jory A. Yarmoff

Nuclear magnetic resonance (NMR) was recently shown to measure the bulk band inversion of Bi$_2$Se$_3$ through changes in the $^{209}$Bi nuclear quadrupole interaction, and the corresponding tensor of the local electric field gradient was…

材料科学 · 物理学 2021-02-24 R. Guehne , J. Haase , C. Shekhar , C. Felser

The protected surface states of topological insulators (TIs) form gapless Dirac cones corresponding non-degenerate eigenstates with helical spin polarisation. The presence of a warping term deforms the isotropic cone of the most simple…

材料科学 · 物理学 2020-07-02 Peter Thalmeier , Alireza Akbari

Topological insulators are known to their metallic surface states, a result of strong-spin-orbital coupling, that show unique surface transport phenomenon. But these surface transports are buried in presence of metallic bulk conduction. We…

We have demonstrated that the evolution of the two-dimensional electron gas (2DEG) system at an interface of metal and the model topological insulator (TI) Bi$_2$Se$_3$ can be controlled by choosing an appropriate kind of metal elements and…

Topological insulators are guaranteed to support metallic surface states on an insulating bulk, and one should thus expect that the electronic transport in these materials is dominated by the surfaces states. Alas, due to the high remaining…

Topological insulators are bulk insulators with exotic surface states, protected under time-reversal symmetry, that hold promise in observing many exciting condensed-matter phenomena. In this report, we show that by having a topological…

介观与纳米尺度物理 · 物理学 2019-10-29 S. Mathimalar , S. Sasmal , P. Rajasekhar , A. Bhardwaj , S. Chaudhary , B. Satpati , K. V. Raman

Topological insulators (TI) have attracted extensive research effort due to their insulating bulk states but conducting surface states. However, investigation and understanding of thermal transport in topological insulators, particularly…

介观与纳米尺度物理 · 物理学 2017-02-07 Zhe Luo , Jifa Tian , Mithun Srinivasan , Yong P. Chen , Xianfan Xu

We report that the finite thickness of three-dimensional topological insulator (TI) thin films produces an observable magnetoresistance (MR) in phase coherent transport in parallel magnetic fields. The MR data of Bi2Se3 and (Bi,Sb)2Te3 thin…

介观与纳米尺度物理 · 物理学 2013-07-30 C. J. Lin , X. Y. He , J. Liao , X. X. Wang , V. Sacksteder , W. M. Yang , T. Guan , Q. M. Zhang , L. Gu , G. Y. Zhang , C. G. Zeng , X. Dai , K. H. Wu , Y. Q. Li

Ab initio electronic structure calculations based on density functional theory and tight-binding methods for the thermoelectric properties of p-type Sb$_2$Te$_3$ films are presented. The thickness-dependent electrical conductivity and the…

Topological insulators (TIs) are intriguing materials for advanced computing applications based on spintronics because they can host robust spin effects. For instance, TIs have intrinsically large spin generation enabled by their large…

介观与纳米尺度物理 · 物理学 2025-03-11 Sharadh Jois , Gregory M. Stephen , Nick Blumenschein , Patrick J. Taylor , Aubrey T. Hanbicki , Adam L. Friedman

We present our angle resolved photoelectron spectroscopy (ARPES) and density functional theory results on quaternary topological insulator (TI) BiSbTe1.25Se1.75 (BSTS) confirming the non-trivial topology of the surface state bands (SSBs) in…

材料科学 · 物理学 2023-10-31 H. Lohani , P. Mishra , A. Banerjee , K. Majhi , R. Ganesan , U. Manju , D. Topwal , P. S. Anil Kumar , B. R. Sekhar

Ultrafast dynamics in three-dimensional topological insulators (TIs) opens new routes for increasing the speed of information transport up to frequencies thousand times faster than in modern electronics. However, up to date, disentangling…

介观与纳米尺度物理 · 物理学 2018-09-24 F. Freyse , M. Battiato , L. V. Yashina , J. Sánchez-Barriga

Three-dimensional topological insulators (TIs) attract much attention due to its topologically protected Dirac surface states. Doping into TIs or their proximity with normal superconductors can promote the realization of topological…

超导电性 · 物理学 2024-12-16 Tian Le , Qikai Ye , Chufan Chen , Lichang Yin , Dongting Zhang , Xiaozhi Wang , Xin Lu

Topological insulators are immensely investigated for their surface states related properties as these materials can be used for various spintronics, quantum computing, and optoelectronics applications. In this perspective, different…

材料科学 · 物理学 2022-07-05 Yogesh Kumar , Prince Sharma , V. P. S. Awana

Study of the dephasing in electronic systems is not only important for probing the nature of their ground states, but also crucial to harnessing the quantum coherence for information processing. In contrast to well-studied conventional…

介观与纳米尺度物理 · 物理学 2017-07-14 Jian Liao , Yunbo Ou , Haiwen Liu , Ke He , Xucun Ma , Qi-Kun Xue , Yongqing Li

Using first principles density functional theory calculations, we show a semimetal to semiconducting electronic phase transition for bulk TiS 2 by applying uniform biaxial tensile strain. This electronic phase transition is triggered by…

材料科学 · 物理学 2015-06-23 Atanu Samanta , Tribhuwan Pandey , Abhishek K. Singh