相关论文: A novel and precise time domain description of MOS…
We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO$_2$ interface. Our measurements demonstrate that two-state fluctuations are localized at interfacial traps, with bias-dependent rates and…
We study random telegraph noise in the conductance of InAs nanowire field-effect transistors due to single electron trapping in defects. The electron capture and emission times are measured as functions of temperature and gate voltage for…
Telegraph noise, which originates from the switching of charge between meta-stable trapping sites, becomes increasingly important as device sizes approach the nano-scale. For charge-based quantum computing, this noise may lead to…
We propose a method to determine the switching rates of a random telegraph signal. We apply digital low pass filtering with varying bandwidth to the raw signal, evaluate the cumulants of the resulting distributions and compare them with the…
The interaction between the telegraph noise and background voltage fluctuations in the current induced dissipative state of high-Tc BiSrCaCuO thin films has been investigated. Experimental time records of the voltage drop across current…
We have investigated the statistics of low frequency noise in the tunneling current of ultrathin oxides (2.5nm-4nm) in metal oxide semiconductor capacitors as a function of the applied voltage stress. The statistical analysis includes (i)…
We study tunneling between a localized defect state and a conduction band in the presence of strong electron-electron and electron-phonons interactions. We derive the tunneling rate as a function of the position of the defect energy level…
We propose a two-terminal method to measure shot noise in mesoscopic systems based on an instability in the current-voltage characteristic of an on-chip detector. The microscopic noise drives the instability, which leads to random switching…
Quantum graphs with leads to infinity serve as convenient models for studying various aspects of systems which are usually attributed to chaotic scattering. They are also studied in several experimental systems and practical applications.…
New experiments that measure the low-frequency shot-noise spectrum at local tunneling contacts on mesoscopic structures are proposed. The current fluctuation spectrum at a single tunneling tip is determined by local partial densities of…
In this paper it is demonstrated that 1/f power spectrum appears in the process originated by the superposition of many single-sided random telegraph signals (RTS or RTN) with the same amplitude, probability and relaxation time. Indeed, the…
We determined the interface state density ($D_{\rm it}$) distributions in the vicinity of the conduction band edge in silicon carbide (SiC) metal-oxide-semiconductor (MOS) structures by reproducing the experimental current-voltage…
Randomization of the trap state of defects present at the gate Si-SiO$_2$ interface of MOSFET is responsible for the low-frequency noise phenomena such as Random Telegraph Signal (RTS), burst, and 1/\textit{f} noise. In a previous work,…
Low-frequency current fluctuations are investigated over a bias range covering {\em ohmic}, {\em trap-filling} and {\em space-charge-limited current} regimes in polycrystalline polyacenes. The relative current noise power spectral density…
We follow the temporal evolution of mesoscopic intensity fluctuations and correlation in strongly localized samples. We find an initial burst in relative transmission fluctuations in random one dimensional (1D) samples due to fluctuations…
Microwave irradiation causes voltage fluctuations in solid state nanodevices. Such an effect is relevant in atomic electronics and nanostructures for quantum information processing, where charge or spin states are controlled by microwave…
Many molecular junctions display stochastic telegraphic switching between two distinct current values, which is therefore an important source of fluctuations in nanoscale quantum transport. We investigate electronic fluctuations arising via…
We obtained a semi-analytical treatment obtaining estimators for the sample variance and variance of sample variance for the RTS noise. Our method suggests a way to experimentally determine the constants of capture and emission in the case…
Time-frequency distributions have been used to provide high resolution representation in a large number of signal processing applications. However, high resolution and accurate instantaneous frequency (IF) estimation usually depend on the…
Random Telegraph Noise is a ubiquitous process manifesting across technology and the natural world. It is characterized by random jumps between two distinct states with Poissonian waiting times, and is the origin of 1/f noise. Understanding…