相关论文: Tunneling Anisotropic Magnetoresistance of Helimag…

The effects of the spin-orbit interaction on the tunneling magnetoresistance of ferromagnet/semiconductor/normal metal tunnel junctions are investigated. Analytical expressions for the tunneling anisotropic magnetoresistance (TAMR) are…

Based on general symmetry considerations we investigate how the dependence of the tunneling anisotropic magnetoresistance (TAMR) on the magnetization direction is determined by the specific form of the spin-orbit coupling field. By…

We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed two-fold anisotropy of the resistance can be switched by reversing the bias voltage,…

Thermoelectric transport across normal-metal/helical-multiferroic/ferromagnetic heterojunctions is theoretically investigated. We find a anisotropic charge and spin thermopower with a $C_{2v}$ symmetry. The angular dependence on the…

We performed a first-principles study of the tunneling anisotropic magneto-resistance (TAMR) in Ag(Ir,Pt)$/$MgO$/$Fe junctions. Enhanced TAMR with ideal and skewed fourfold angular dependence is found in-plane and out-of-plane TAMR of the…

We report experiments on epitaxially grown Fe/GaAs/Au tunnel junctions demonstrating that the tunneling anisotropic magnetoresistance (TAMR) effect can be controlled by a magnetic field. Theoretical modelling shows that the interplay of the…

We theoretically investigate quantum transport through single-molecule magnet (SMM) junctions with ferromagnetic and normal-metal leads in the sequential regime. The current obtained by means of the rate-equation gives rise to the tunneling…

First-principles calculations of electron tunneling transport in Ni and Co break junctions reveal strong dependence of the conductance on the magnetization direction, an effect known as tunneling anisotropic magnetoresistance (TAMR). The…

The effects of the spin-orbit interaction on the tunneling magnetoresistance of magnetic tunnel junctions are investigated. A model in which the experimentally observed two-fold symmetry of the anisotropic tunneling magnetoresistance (TAMR)…

Using a simple quantum-mechanical model, we explore a tunneling anisotropic magnetoresistance (TAMR) effect in ferroelectric tunnel junctions (FTJs) with a ferromagnetic electrode and a ferroelectric barrier layer, which spontaneous…

We report the observation of tunneling anisotropic magnetoresistance (TAMR) in an organic spin-valve-like structure with only one ferromagnetic electrode. The device is based on a new high mobility perylene diimide-based n-type organic…

We report a large tunneling anisotropic magnetoresistance (TAMR) in a thin (Ga,Mn)As epilayer with lateral nanoconstrictions. The observation establishes the generic nature of this effect, which originates from the spin-orbit coupling in a…

We observe spin-valve-like effects in nano-scaled thermally evaporated Co/AlOx/Au tunnel junctions. The tunneling magnetoresistance is anisotropic and depends on the relative orientation of the magnetization direction of the Co electrode…

Tunneling anisotropic magnetoresistance (TAMR) effect, discovered recently in (Ga,Mn)As ferromagnetic semiconductors, arises from spin-orbit coupling and reflects the dependence of the tunneling density of states in a ferromagnetic layer on…

We reveal that the interplay between Rashba spin-orbit coupling and proximity-induced magnetization in a two-dimensional electron gas leads to peculiar transport properties and large anisotropy of magnetoresistance. While the related…

The tunnelling anisotropic magnetoresistance (TAMR) effect describes the sensitivity of spin-polarized electron transport to the orientation of the magnetization with respect to the crystallographic axes. As the TAMR effect requires only a…

We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled…

The Tunneling Anisotropic Magneto-Thermopower (TAMT) and the Tunneling Anisotropic Spin-Seebeck (TASS) effects are studied for a magnetic tunnel junction (MTJ) composed of a ferromagnetic electrode, a zinc-blende semiconductor and a normal…

Using first-principles quantum-transport calculations, we investigate spin-dependent electronic and transport properties of antiferromagnetic tunnel junctions (AFMTJs) that consist of (110)-oriented antiferromagnetic (AFM) metal RuO$_{2}$…

Magnetic tunnel junctions (MTJs) with Hf0.5Zr0.5O2 barriers are reported to show both tunneling magnetoresistance effect (TMR) and tunneling electroresistance effect (TER), displaying four resistance states by magnetic and electric field…