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Advanced electronic device technologies require a faster operation and smaller average power consumption, which are the most important parameters in very large scale integrated circuit design. The conventional Complementary Metal-Oxide…

新兴技术 · 计算机科学 2018-05-11 A. Nagalakshmi , Ch. Sirisha , Dr. D. N. Madhusudana Rao

We report evidence for high temperature superconductivity in three dimensional networks of boron doped, ultrathin carbon nanotubes (CNTs) grown inside the ~5 Angstrom channels of ZSM-5 zeolite. Confinement stabilizes (2,1) CNTs that are…

超导电性 · 物理学 2026-05-08 Y. Wang , T. H. Koo , R. Huang , Y. H. Ng , T. T. Lortz , T. Zhang , W. M. Chan , Y. Hou , J. Pan , S. Krämer , A. Demuer , R. Lortz , N. Wang , P. Sheng

We have observed the transversal vibration mode of suspended carbon nanotubes at millikelvin temperatures by measuring the single-electron tunneling current. The suspended nanotubes are actuated contact-free by the radio frequency electric…

介观与纳米尺度物理 · 物理学 2009-07-18 A. K. Huettel , G. A. Steele , B. Witkamp , M. Poot , L. P. Kouwenhoven , H. S. J. van der Zant

Single electron transistors (SETs) made from single wall carbon nanotubes (SWCNTs) are promising for quantum electronic devices operating with ultra-low power consumption and allow fundamental studies of electron transport. We report on…

介观与纳米尺度物理 · 物理学 2017-05-09 Nan Ai , Onejae Sul , Milan Begliarbekov , Qiang Song , Kitu Kumar , Daniel S. Choi , Eui-Hyeok Yang , Stefan Strauf

Hot electrons injection in carbon nanotubes (CNTs ) where in addition to applied dc field ($\mathbf{E}$), there exist simultaneously a quasi-static ac electric field (i.e. when the frequency $\omega$ of ac field is much less than the…

介观与纳米尺度物理 · 物理学 2016-04-20 M. Amekpewu , S. Y. Mensah , R. Musah , N. G. Mensah , S. S. Abukari , K. A. Dompreh

A simple method to calculate the static electric polarization of single-walled carbon nanotube (SWNT) is obtained within the second-order perturbation approximation. The results are in agreement with the previous calculation within the…

介观与纳米尺度物理 · 物理学 2007-05-23 Xin Zhou , Hu Chen , Ou-Yang Zhong-can

Carbon nanotubes play a fundamental role in the rapidly developing field of nanoscience and nanotechnology because of their unique properties and high potential applictions. In this article, the different synthesis method of CNTs are…

材料科学 · 物理学 2007-05-23 Kalpana Awasthi , Anchal Srivastava , O. N. Srivastava

Carbon nanotube field-effect transistors with sub 20 nm long channels and on/off current ratios of > 1000000 are demonstrated. Individual single-walled carbon nanotubes with diameters ranging from 0.7 nm to 1.1 nm grown from structured…

We demonstrate assembly of solution processed semiconducting enriched (99%) single walled carbon nanotubes (s-SWNT) in an array with varying linear density via ac-dielectrophoresis and investigate detailed electronic transport properties of…

介观与纳米尺度物理 · 物理学 2011-05-05 Biddut K. Sarker , Shashank Shekhar , Saiful I. Khondaker

Measurements of current-voltage characteristics from ideal carbon nanotube (CNT) field electron emitters of small apex radius have shown that these emitters can exhibit a linear Fowler-Nordheim (FN) plot [e.g., Dean and Chalamala, Appl.…

Experimental Fowler-Nordheim plots taken from orthodoxly behaving carbon nanotube (CNT) field electron emitters are known to be linear. This shows that, for such emitters, there exists a characteristic field enhancement factor (FEF) that is…

Carbon nanotube (CNT) is expected for much more important and broader applications in the future, because of its amazing electrical and mechanical properties. However, today, the prospect is detained by the fact that the growth of CNTs…

材料科学 · 物理学 2007-05-23 Shuang Zhang , Takeo Hoshi , Takeo Fujiwara

The sensitive conductance change of semiconductor nanowires and carbon nanotubes in response to binding of charged molecules provide a novel sensing modality which is generally denoted as nanoFET sensors. In this paper, we study the scaling…

材料科学 · 物理学 2009-11-13 Fu-Shan Zhou , Qi-Huo Wei

We report here on electrical measurements on individual multi-walled carbon nanotubes (MWNTs) that show that the presence or movement of impurities or defects in the carbon nanotube can radically change its low temperature transport…

介观与纳米尺度物理 · 物理学 2007-05-23 Zhengfan Zhang , Venkat Chandrasekhar , Dmitriy A. Dikin , Rodney S. Ruoff

We report ultra-high density assembly of aligned single walled carbon nanotubes (SWNTs) two dimensional arrays via ac dielectrophoresis using high quality surfactant free and stable SWNT solutions. After optimization of frequency and…

介观与纳米尺度物理 · 物理学 2011-01-13 Shashank Shekhar , Paul Stokes , Saiful I. Khondaker

We have theoretically investigated electromechanical properties of freely suspended carbon nanotubes when a current is injected into the tubes using a scanning tunneling microscope. We show that a shuttle-like electromechanical instability…

介观与纳米尺度物理 · 物理学 2015-06-25 L. M. Jonsson , L. Y Gorelik , R. I. Shekhter , M. Jonson

Efficient and controlled charge transport in networks of semiconducting single-walled carbon nanotubes is the basis for their application in electronic devices, especially in field-effect transistors and thermoelectrics. The recent advances…

应用物理 · 物理学 2021-11-19 Nicolas F. Zorn , Jana Zaumseil

We demonstrate the field-effect transistor (FET) operation of molecularly-thin anatase phase produced through solid state transformation from Ti0.87O2 nanosheets. Monolayer Ti0.87O2 nanosheet with a thickness of 0.7 nm is two-dimensional…

材料科学 · 物理学 2017-08-31 S. Sekizaki , M. Osada , K. Nagashio

The interactions between carbon nanotubes (CNTs) and metal adatoms as well as metal contacts are studied by means of ab initio electronic structure calculations. We show that the electronic properties of a semiconducting (8,4) CNT can be…

介观与纳米尺度物理 · 物理学 2017-07-04 F. Fuchs , A. Zienert , C. Wagner , J. Schuster , S. E. Schulz

We describe a robust technique for the fabrication of high performance vertically scaled n-doped field-effect transistors from large band gap carbon nanotubes. These devices have a tunable threshold voltage in the technologically relevant…

材料科学 · 物理学 2009-11-10 M. Radosavljevic , J. Appenzeller , Ph. Avouris , J. Knoch