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Following a recent discovery of the Insulator-to-Metal Transition induced by electric field in GaTa$_{4}$Se$_{8}$, we performed a detailed Scanning Tunneling Microscopy/Spectroscopy study of both pristine (insulating) and transited…

The fundamental building blocks of modern silicon-based microelectronics, such as double gate transistors in non-volatile Flash memories, are based on the control of electrical resistance by electrostatic charging. Flash memories could soon…

材料科学 · 物理学 2013-04-23 Laurent Cario , Cristian Vaju , Benoit Corraze , Vincent Guiot , Etienne Janod

An abrupt metal-insulator transition (MIT) was observed in VO2 thin films during the application of a switching voltage pulse to two-terminal devices. Any switching pulse over a threshold voltage for the MIT of 7.1 V enabled the device…

强关联电子 · 物理学 2009-11-11 Byung-Gyu Chae , Hyun-Tak Kim , Doo-Hyeb Youn , Kwang-Yong Kang

Metal-insulator transition (MIT) is one of the most conspicuous phenomena in correlated electron systems. However such transition has rarely been induced by an external magnetic field as the field scale is normally too small compared with…

强关联电子 · 物理学 2020-12-02 Guangqiang Wang , Guoqing Chang , Huibin Zhou , Wenlong Ma , Hsin Lin , M. Zahid Hasan , Su-Yang Xu , Shuang Jia

The nature of the Mott transition in the absence of any symmetry braking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa4Se8, as a function of temperature and…

强关联电子 · 物理学 2015-06-22 A. Camjayi , C. Acha , R. Weht , M. G. Rodríguez , B. Corraze , E. Janod , L. Cario , M. J. Rozenberg

Metal-to-insulator transitions (MIT) can be driven by a number of different mechanisms, each resulting in a different type of insulator -- Change in chemical potential can induce a transition from a metal to a band insulator; strong…

When electron-electron interaction dominates over other electronic energy scales, exotic, collective phenomena often emerge out of seemingly ordinary matter. The strongly correlated phenomena, such as quantum spin liquid and unconventional…

We consider the phenomenon of electric Mott transition (EMT), which is an electric induced insulator to metal transition. Experimentally, it is observed that depending on the magnitude of the electric excitation the final state may show a…

Mott insulator to metal transitions under electric field are currently the subject of numerous fundamental and applied studies. This puzzling effect, which involves non-trivial out-of-equilibrium effects in correlated systems, is indeed at…

强关联电子 · 物理学 2014-07-09 P. Stoliar , M. Rozenberg , E. Janod , B. Corraze , J. Tranchant , L. Cario

The insulator-to-metal transition in Mott insulators is the key mechanism for a novel class of electronic devices, belonging to the Mottronics family. Intense research efforts are currently devoted to the development of specific control…

One of today's most exciting research frontier and challenge in condensed matter physics is known as Mottronics, whose goal is to incorporate strong correlation effects into the realm of electronics. In fact, taming the Mott…

Electronic conduction in GaM$_{4}$Se$_{8}$ (M=Nb;Ta) compounds with the fcc GaMo$_{4}$S$_{8}$-type structure originates from hopping of localized unpaired electrons (S=1/2) among widely separated tetrahedral M$_{4}$ metal clusters. We show…

超导电性 · 物理学 2009-11-11 M. M. Abd-Elmeguid , B. Ni , D. I. Khomskii , R. Pocha , D. Johrendt , X. Wang , K. Syassen

The electrical control of a material's conductivity is at the heart of modern electronics. Conventionally, this control is achieved by tuning the density of mobile charge carriers. A completely different approach is possible in Mott…

The use of intense tailored light fields is the perfect tool to achieve ultrafast control of electronic properties in quantum materials. Among them, Mott insulators are materials in which strong electron-electron interactions drive the…

强关联电子 · 物理学 2023-02-07 Eduardo B. Molinero , Rui E. F. Silva

We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator…

强关联电子 · 物理学 2009-10-30 Dragana Popovic , A. B. Fowler , S. Washburn

We study a bandwidth controlled Mott metal-insulator transition (MIT) between a Fermi liquid metal and a quantum spin-liquid insulator at half-filling in three dimensions (3D). Using a slave rotor approach, and incorporating gauge field…

强关联电子 · 物理学 2013-05-29 Daniel Podolsky , Arun Paramekanti , Yong Baek Kim , T. Senthil

In addition to its promising potential for applications, GaV4S8 shows very interesting physical properties with temperature and magnetic field. These properties can be tuned by applying hydrostatic pressure in order to reveal and understand…

Recently, application of electric field (E-field) has received considerable attention as a new method to induce novel quantum phenomena since application of E-field can tune the electronic states directly with obvious scientific and…

强关联电子 · 物理学 2013-09-03 Fumihiko Nakamura , Mariko Sakaki , Yuya Yamanaka , Sho Tamaru , Takashi Suzuki , Yoshiteru Maeno

A major challenge in condensed matter physics is integrating topological phenomena with correlated electron physics to leverage both types of states for next-generation quantum devices. Metal-insulator transitions (MITs) are central to…

The evolution of a Landau Fermi liquid into a nonmagnetic Mott insulator with increasing electronic interactions is one of the most puzzling quantum phase transitions in physics. The vicinity of the transition is believed to host exotic…

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