相关论文: Auger recombination rates in nitrides from first p…
Cold atom interferometers use guiding potentials that split the wave function of the Bose-Einstein condensate and then recombine it. We present theoretical analysis of the wave function recombination instability that is due to the weak…
We calculate electron-hole generation and recombination rates for Coulomb scattering (Auger recombination and impact ionization) in Graphene. The conduction and valence band dispersion relation in Graphene together with energy and momentum…
Pump-dependent photoluminescence imaging and 2nd order photon correlation studies have been performed on individual single-walled carbon nanotubes (SWCNTs) at room temperature that enable the extraction of both the exciton diffusion…
Carrier recombination and transport processes play key roles in determining the optoelectronic performances such as the efficiency droop and forward voltage in InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs). In this…
We approximately compute the bispectrum induced on the CMB temperature by fluctuations in the standard recombination epoch. Of all the second order sources that can induce non-Gaussianity during recombination, we concentrate on those…
In this letter, we present non-degenerate ultrafast optical pump-probe studies of the carrier recombination dynamics in MoS$_{2}$ monolayers. By tuning the probe to wavelengths much longer than the exciton line, we make the probe…
Photoluminescence spectra from disordered InN were studied in very high magnetic fields. The samples had Gaussian spectra with low temperature emission peaks at 0.82 and 0.98eV respectively. The average spatial extent of the excitonic wave…
Auger parameter analysis provides in-depth information about the electronic and chemical bonding properties of TiN and AlN thin films, which are relevant across a wide range of technologies. Meaningful interpretation and analysis of the…
Thermal decomposition of wurtzite (0001)-oriented GaN was analyzed: in vacuum, under active N exposure, and during growth by rf-plasma assisted molecular beam epitaxy. The GaN decomposition rate was determined by measurements of the Ga…
In this contribution we present a protocol to evaluate partial and total Auger decay rates combining the restricted active space self-consistent field electronic structure method for the bound part of the spectrum and numerically obtained…
At intermediate to high densities, electron (de-)excitation collisions are the dominant process for populating or depopulating high Rydberg states. In particular, the accurate knowledge of the energy changing ($n$-changing) collisional…
Hot electrons undergo Auger scattering during their relaxation process has a multiplication effect,which can generate more electrons above the Fermi level, thus improving the efficiency of photoelectric signal conversion.However,the…
With an eye on plasma walls we investigate, within an effective model for the two active electrons involved in the process, secondary electron emission due to Auger de-excitation of metastable nitrogen $N_2(^3\sigma^+_u)$ molecules at…
We present an eight-band k.p model for the calculation of the electronic structure of wurtzite semiconductor quantum dots (QDs) and its application to indium gallium nitride (InGaN) QDs formed by composition fluctuations in InGaN layers.…
We analyze the link between active galactic nuclei (AGN) and mid-infrared flux using dust radiative transfer calculations of starbursts realized in hydrodynamical simulations. Focusing on the effects of galaxy dust, we evaluate diagnostics…
Near infrared spectra with resolution R ~ 1100 in the rest wavelength range 1.8-2.2 microns have been obtained for a complete sample of 33 ultraluminous infrared galaxies. Of the 33 objects observed, 2 show evidence of a central AGN through…
The role of galaxy mergers in fueling active galactic nuclei (AGN) is still debated, owing partly to selection effects inherent to studies of the merger/AGN connection. In particular, luminous AGN are often heavily obscured in late-stage…
Bandstructure properties in wurtzite quantum wells can change appreciably with changing carrier density because of screening of quantum-confined Stark effect. An approach for incorporating these changes in an InGaN light-emitting-diode…
The influence of reaction order and trap-assisted recombination on continuous-wave photoinduced absorption measurements is clarified through analytical calculations and numerical simulations. The results reveal the characteristic influence…
In pursuit of quantum advancements across disciplines, a bright and coherent electron source is expected to be a cornerstone of diverse applications including electron microscopy, laser accelerators, and free electron lasers. Current…