相关论文: Auger recombination rates in nitrides from first p…

We present the first measurements and simulations of recombination fluorescence in ultracold neutral plasmas. In contrast with previous work, experiment and simulation are in significant disagreement. Comparison with a recombination model…

InGaN light-emitting diodes (LEDs) are more efficient and cost effective than incandescent and fluorescent lighting, but lattice mismatch limits the thickness of InGaN layers that can be grown on GaN without performance-degrading…

We calculate the electron recombination rates with target ions W$^{q+}$, $q = 18$ -- $25$, as functions of electron energy and electron temperature (i.e. the rates integrated over the Maxwellian velocity distribution). Comparison with…

Using cyclotron resonance, we measure the effective mass, $m$*, of electrons in AlGaN/GaN heterostructures with densities, $n_{2D}\sim 1-6\times10^{12}$cm$^{-2}$. From our extensive data, we extrapolate a band edge mass of $(0.208\pm0.002)…

Intensity-dependent enhancement of saturable absorption in a film of PbS-Au4 nanohybrid composites has been observed by femtosecond time-resolved transient absorption measurement at 780 nm. The nonlinear absorption coefficient of saturable…

Based on the full band electronic structure calculations, first we consider the effect of n-type doping on the optical absorption and the refractive index in wurtzite InN and GaN. We identify quite different dielectric response in either…

We present the results of a calculation of recombination coefficients for O^{2+} + e^- using an intermediate coupling treatment that fully accounts for the dependence of the distribution of population among the ground levels of O^{2+} on…

We report new measurements of the near infrared (NIR) Xe$_2^*$ excimer fluorescence in an electron--beam--excited Ar (90%)--Xe (10 %) mixture at room temperature. Previous measurements up to a density $N\approx 2\times 10^{26}$ m$^{-3}$…

The radiative recombination rates of interacting electron-hole pairs in a quantum dot are strongly affected by quantum correlations among electrons and holes in the dot. Recent measurements of the biexciton recombination rate in single…

We present two models for the atomic structure of inversion domain boundaries in wurzite GaN, that have not been discussed in existing literature. Using density functional theory, we find that one of these models has a lower formation…

The thermodynamics properties of the wurtzite and zinc-blende \InGaN alloys are calculated using first-principles density-functional calculations. Special quasi-random structures are used to describe the disordered alloys, for $x= 1/4,…

We investigate universal behavior in the recombination rate of three bosons close to threshold. Using the He-He system as a reference, we solve the three-body Schr\"odinger equation above the dimer threshold for different potentials having…

Intentionally-produced inversion domain boundaries in GaN have been reported to be highly efficient recombination centers. Here I report a rationale for this phenomenon based on ab initio density-functional calculations. I also propose a…

The rate coefficient for radiative and dielectronic recombination of berylliumlike magnesium ions was measured with high resolution at the Heidelberg heavy-ion storage ring TSR. In the electron-ion collision energy range 0-207 eV resonances…

We perform photometric measurements on a large HST snapshot imaging survey sample of 97 ultraluminous infrared galaxies (ULIRGs). We select putative nuclei from bright clumps in all the sample targets, mainly based on a quantitative…

The luminescence yield of transition metal dichalcogenide monolayers frequently suffers from the formation of long-lived dark states, which include excitons with intervalley charge carriers, spin-forbidden transitions, and a large…

Using a band-structure method that includes the correction to the band gap error in the local density approximation (LDA), we study the chemical trends of the band gap variation in III-V semiconductors and predict that the band gap for InN…

We report on temperature- and excitation-power-dependent photoluminescence (PL) study of CuInS$_{2}$/ZnS nanocrystals dispersed on a SiO$_{2}$/Si substrate with a confocal micro-PL system. With increasing the excitation power at 22 K and…

A nanoscale non-contact electrical measurement has been developed based on Auger electron spectroscopy. This approach used the speciality of Auger electron, which is self-generated and free from external influences, to overcome the…

We report the first quasiparticle calculations of the newly observed wurtzite polymorph of InAs and GaAs. The calculations are performed in the GW approximation using plane waves and pseudopotentials. For comparison we also report the study…