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We consider the change in electron localization due to the presence of electron-electron repulsion in the \HA model. Taking into account local Mott-Hubbard physics and static screening of the disorder potential, the system is mapped onto an…

无序系统与神经网络 · 物理学 2008-12-28 Peter Henseler , Johann Kroha , Boris Shapiro

For the Fermi-Hubbard model in the Mott insulator phase, we employ the hierarchy of correlations to study how doublon and holon quasi-particle excitations are affected by adding disorder to the system. We study two types of disorder: charge…

We analyze the one-dimensional extended Hubbard model with a single static impurity by using a computational technique based on the functional renormalization group. This extends previous work for spinless fermions to spin-1/2 fermions. The…

强关联电子 · 物理学 2007-05-23 S. Andergassen , T. Enss , V. Meden , W. Metzner , U. Schollwoeck , K. Schoenhammer

We investigate disorder-induced localization in metals that break time-reversal and inversion symmetries through their energy dispersion, $\epsilon_{k}\neq\epsilon_{-k}$, but lack Berry phases. In the perturbative regime of disorder, we…

无序系统与神经网络 · 物理学 2023-08-25 Kartikeya Arora , Rajeev Singh , Pavan Hosur

We propose a Real-Space Gutzwiller variational approach and apply it to a system of repulsively interacting ultracold fermions with spin 1/2 trapped in an optical lattice with a harmonic confinement. Using the Real-Space Gutzwiller…

强关联电子 · 物理学 2010-10-26 Jianqing Qi , Lei Wang , Xi Dai

By applying tight binding model of adatoms in graphene, we study theoretically the localized aspects of the interaction between transition metal atoms and graphene. Considering the electron-electron interaction by adding a Hubbard term in…

强关联电子 · 物理学 2018-06-14 F. Escudero , J. S. Ardenghi , L. Sourrouille , P. Jasen , A. Juan

We consider Anderson localization and the associated metal-insulator transition for non-interacting fermions in D = 1, 2 space dimensions in the presence of spatially correlated on-site random potentials. To assess the nature of the…

无序系统与神经网络 · 物理学 2014-08-05 Eric C. Andrade , Mark Steudtner , Matthias Vojta

We introduce a solvable model of driven fermions that elucidates the role of the localization transition in driven disordered magnets, as used in the context of dynamic nuclear polarization. Instead of spins, we study a set of…

强关联电子 · 物理学 2018-12-19 Inés Rodríguez-Arias , Markus Müller , Alberto Rosso , Andrea De Luca

This thesis investigates the magnetic, spectral, and transport properties of strongly correlated electronic systems, with a primary focus on the Hubbard model and its extensions relevant for real materials. Within the dynamical mean-field…

强关联电子 · 物理学 2026-03-19 Joel Bobadilla

Experiments with quantum gas microscopes have started to explore the antiferromagnetic phase of the two-dimensional Fermi-Hubbard model and effects of doping with holes away from half filling. In this work we show how direct measurements of…

量子气体 · 物理学 2019-03-14 Sebastian Huber , Fabian Grusdt , Matthias Punk

We apply Dynamical Mean-Field Theory to strongly interacting fermions in an inhomogeneous environment. With the help of this Real-Space Dynamical Mean-Field Theory (R-DMFT) we investigate antiferromagnetic states of repulsively interacting…

强关联电子 · 物理学 2008-09-11 M. Snoek , I. Titvinidze , C. Toke , K. Byczuk , W. Hofstetter

We investigate the effects of static, diagonal disorder in the $d=\infty$ Hubbard model by treating the dynamical effects of local Hubbard correlations and disorder on an equal footing. This is achieved by a proper combination of the…

强关联电子 · 物理学 2007-05-23 L. Craco , M. S. Laad , E. Müller-Hartmann

We study the suppression of electron localization due to the screening of disorder in a Hubbard-Anderson model. We focus on the change of the electron localization length at the Fermi level within a static picture, where interactions are…

无序系统与神经网络 · 物理学 2012-02-07 P. Henseler , J. Kroha , B. Shapiro

We consider repulsively-interacting cold fermionic atoms loaded on an optical ladder lattice in a trapping potential. The density-matrix renormalization-group method is used to numerically calculate the ground state for systematically…

量子气体 · 物理学 2011-04-25 M. Okumura , S. Yamada , M. Machida , H. Aoki

The cluster slave-spin method is introduced to systematically investigate the solutions of the Hubbard model including the symmetry-broken phases. In this method, the electron operator is factorized into a fermioninc spinon describing the…

强关联电子 · 物理学 2017-09-12 Wei-Cheng Lee , Ting-Kuo Lee

Using the fractional moment method it is shown that, within the Hartree-Fock approximation for the Disordered Hubbard Hamiltonian, weakly interacting Fermions at positive temperature exhibit localization, suitably defined as exponential…

数学物理 · 物理学 2021-06-14 Rodrigo Matos , Jeffrey Schenker

Significant decrease of spontaneous magnetization in frustrated one-dimensional ferro- and ferrimagnets due to non-magnetic impurities is predicted. Using the density-matrix renormalization group method and the exact diagonalization method,…

强关联电子 · 物理学 2009-03-23 Masanori Kohno , Xiao Hu

We investigate the itinerant ferromagnetism using a diluted spin-fermion model, derived from a repulsive Hubbard model, where itinerant fermions are coupled antiferromagnetically to auxiliary fields in a three-dimensional simple cubic…

强关联电子 · 物理学 2022-01-31 Sourav Chakraborty , Sandip Halder , Kalpataru Pradhan

Altermagnets feature vanishing net magnetization, like antiferromagnets, but exhibit time-reversal symmetry breaking and momentum-dependent spin-split band structures. Motivated by the prevalence of altermagnetic materials with…

强关联电子 · 物理学 2024-10-10 Mercè Roig , Andreas Kreisel , Yue Yu , Brian M. Andersen , Daniel F. Agterberg

Density of states, dynamic (optical) conductivity and phase diagram of paramagnetic two-dimensional Anderson-Hubbard model with strong correlations and disorder are analyzed within the generalized dynamical mean-field theory (DMFT+Sigma…

强关联电子 · 物理学 2010-05-17 E. Z. Kuchinskii , N. A. Kuleeva , I. A. Nekrasov , M. V. Sadovskii