相关论文: Hall effect in laser ablated Co_2(Mn,Fe)Si thin fi…

The question is investigated whether the anomalous Hall effect (AHE) in Fe films is due to skew scattering or side jump. For this purpose sandwiches of FeIn are investigated in which the conduction electrons carry their drift velocity…

In this paper, we perform a systematic {\it ab initio} study of two principal spin-related phenomena, namely, anomalous Hall effect and current spin polarization, in Co$_2$Fe-based Heusler compounds Co$_2$FeX (X = Al, Ga, In, Si, Ge, Sn)…

In situ transport measurements have been made on ultrathin ($<$100 {\AA} thick) polycrystalline Fe films as a function of temperature and magnetic field for a wide range of disorder strengths. For sheet resistances $R_{xx}$ less than $\sim…

We investigate the Hall effect in a quasi one-dimensional system made of weakly coupled Luttinger Liquids at half filling. Using a memory function approach, we compute the Hall coefficient as a function of temperature and frequency in the…

Quantum phenomena emerging from the interaction of light and matter in low-dimensional systems hold great potential for future quantum technologies. Here, using first-principles calculations incorporating non-local van der Waals…

We report resistivity, Hall coefficient, current-voltage characteristics, and magneto-optical imaging measurements of epitaxial Co-doped BaFe_{2}As_{2} thin films deposited on MgO(001) substrate. The Hall resistivity of the films has a…

Magnetic Weyl semimetals with spontaneously broken time-reversal symmetry exhibit a large intrinsic anomalous Hall effect originating from the Berry curvature. To employ this large Hall current for room temperature topo-spintronics…

Antiferromagnetic Weyl semimetals with spin chirality offer excellent platforms to address the Berry phase physics, which manifests prominently in several of their electro-optical and electro-magnetic responses including as a large…

We report the growth of thin films of the mixed valence compound YbAl$_{3}$ on MgO using molecular-beam epitaxy. Employing an aluminum buffer layer, epitaxial (001) films can be grown with sub-nm surface roughness. Using x-ray diffraction,…

We have grown VO2 thin films by laser ablation for electronic device applications. In obtaining the thin films of the pure VO2 phase, oxygen partial pressure is a critical parameter because vanadium oxides have several phases with the…

Cuprous oxide (Cu2O) films from 25 nm to 1500 nm were electrodeposited on n-Si(100) and Ni/n-Si(100) substrates from aqueous solution at room temperature. X-ray diffraction and transmission electron microscopy imaging show that the Cu2O…

While the anomalous Hall effect can manifest even without an external magnetic field, time reversal symmetry is nonetheless still broken by the internal magnetization of the sample. Recently, it has been shown that certain materials without…

High quality vanadium sesquioxide V2O3 films (170-1100 {\AA}) were grown using the pulsed laser deposition technique on (0001)-oriented sapphire substrates, and the effects of film thickness on the lattice strain and electronic properties…

We propose a new empirical formula for the anomalous Hall effect in heavy electron materials based on a phenomenological two-fluid description of the f-electron states. The new formula incorporates two previous theories proposed by Fert and…

We have measured the magnetotransport properties and Hall effect of a series of epitaxial NbN films grown on (100) oriented single crystalline MgO substrate under different conditions using reactive magnetron sputtering. Hall effect…

The Hall effect is a powerful tool for investigating carrier type and density. For single-band materials, the Hall coefficient is traditionally expressed simply by $R_H^{-1} = -en$, where $e$ is the charge of the carrier, and $n$ is the…

The Hall conductivities of HgBa_{2}CaCu_{2}O_{6+\delta}and HgBa_{2}Ca_{2}Cu_{3}O_{8+\delta} thin films are investigated for a magnetic field parallel to the c axis. The mixed-state Hall conductivity for these compounds is well described by…

GaMnAs/GaAs films were grown via molecular beam epitaxy using both low and high substrate temperatures. The films were investigated using Hall effect and photoluminescence (PL) measurements from 8 to 300 K. The carrier concentrations in the…

Temperature-dependence and magnetic field-dependence of the Hall effect and the magnetic property in manganese-oxide thin films are studied. The spontaneous magnetization and the Hall resistivity are obtained for a various of magnetic…

Co$_3$Sn$_2$S$_2$ is a ferromagnetic semi-metal with Weyl nodes in its band structure and a large anomalous Hall effect below its Curie temperature of 177 K. We present a detailed study of its Fermi surface and examine the relevance of the…