相关论文: Electrical Switching Dynamics in Circular and Rect…
Much effort has been devoted to device and materials engineering to realize nanoscale resistance random access memory (RRAM) for practical applications, but there still lacks a rational physical basis to be relied on to design scalable…
Chalcogenide phase-change materials (PCMs) are widely applied in electronic and photonic applications, such as non-volatile memory and neuro-inspired computing. Doped Sb$_2$Te alloys are now gaining increasing attention for on-chip photonic…
In this article, we use hybrid density functional (HSE06) to study the crystal and electronic structures and optical properties of well known phase change memory material $\mathrm{Ge_{2}Sb_{2}Te_{5}}$. We calculate the structural…
Scaling information bits to ever smaller dimensions is a dominant drive for information technology (IT). Nanostructured phase change material emerges as a key player in the current green-IT endeavor with low power consumption, functional…
In the mammalian nervous system, various synaptic plasticity rules act, either individually or synergistically, and over wide-ranging timescales to dictate the processes that enable learning and memory formation. To mimic biological…
Reversible bipolar nano-switches that can be set and read electronically in a solid-state two-terminal device are very promising for applications. We have performed molecular-dynamics simulations that mimic systems with oxygen vacancies…
Tailoring the degree of structural disorder in Ge-Sb-Te alloys is important for the development of non-volatile phase-change memory and neuro-inspired computing. Upon crystallization from the amorphous phase, these alloys form a cubic…
Electrical switching has been observed in carefully designed metal-insulator-metal devices built at small geometries. These devices are also commonly known as memristors and consist of specific materials such as transition metal oxides,…
The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling…
Non-volatile multivalued memory effects caused by magnetic fields, currents, and voltage pulses are studied in Nd_{0.65}Ca_{0.35}MnO_3 and (Nd_{1-y}Sm_{y})_{0.5}Sr_{0.5}MnO_3 (y=0.75) single crystals in the hysteretic region between…
We develop a theory of pulse conduction in percolation type of materials such as noncrystalline semiconductors and nano-metal compounds. For short voltage pulses, the corresponding electric currents are inversely proportional to the pulse…
Phase change materials are exploited in non-volatile electronic memories and photonic devices that rely on a fast and reversible transformation between the amorphous and crystalline phase upon heating. The recrystallization of the amorphous…
Phase change memory (PCM) is an emerging data storage technology, however its programming is thermal in nature and typically not energy-efficient. Here we reduce the switching power of PCM through the combined approaches of filamentary…
We have studied the effects of accumulating cyclic electrical pulses of increasing amplitude on the non-volatile resistance state of interfaces made by sputtering a metal (Au, Pt) on top of the surface of a cuprate superconductor…
Motivated by the recent development of fast and ultra-sensitive thermometry in nanoscale systems, we investigate quantum calorimetric detection of individual heat pulses in the sub-meV energy range. We propose a hybrid superconducting…
This letter analyzes the scaling property of nanowire (NW) phase change memory (PCM) using analytic and numerical methods. The scaling scenarios of the three widely-used NW PCM peration schemes (constant electric field, voltage, and…
TiSe2 has received much attention among the transition metals chalcogenides because of its thrilling physical properties concerning atypical resistivity behavior, emerging of charge density wave (CDW) state, induced superconductivity etc.…
We report on switching among three charge-density-wave phases - commensurate, nearly commensurate, incommensurate - and the high-temperature normal metallic phase in thin-film 1T-TaS2 devices induced by application of an in-plane electric…
We report pulsed as well as direct current/voltage induced electroresistance in Bi0.8Sr0.2MnO3 at room temperature. It is shown that bi-level and multi-level resistivity switching can be induced by a sequence of pulses of varying pulse…
Schemes of switching nanomagnetic memories via the effect of spin torque with various polarizations of injected electrons are studied. Simulations based on macrospin and micromagnetic theories are performed and compared. We demonstrate that…