相关论文: Electrical Switching Dynamics in Circular and Rect…
We present an integrated switch that combines plasmonic and neuromorphic technologies with a single sub-stoichiometric VO2-x nanoparticle. The presented device acts as a versatile plasmonic switch with dual thermal and electrical…
We present a new type of phase-change behavior relevant for information storage applications, that can be observed in 2D systems with cluster-forming ability. The temperature-based control of the ordering in 2D particle systems depends on…
Electrical measurements of ferroelectric switching kinetics are widely used to probe the dynamics of polarization reversal, yet the influence of the measurement circuit is often underappreciated. In this paper, we show that the interplay…
Nanostructured electrodes with voids or interconnected pores accommodate large volume changes, shorten ion diffusion pathways, and enhance the structural reversibility of alloying electrodes. While these nanoporous features improve the…
The heart of every switched mode converter consists of several switching semiconductor elements. Due to their non-ideal behaviour there are ON state and switching losses heating up the silicon chip. That heat must effectively be transferred…
Magnetic response of the spin-$1/2$ cylindrical nanowire to the propagating magnetic field wave has been investigated by means of Monte Carlo simulation method based on Metropolis algorithm. The obtained microscopic spin configurations…
This work presents the mathematical modeling and numerical investigation of a thermo-controlled Micro-Electro-Mechanical System (MEMS) obtained by coupling an HP memristor with mechanical and electrical resonators. Using the linear drift HP…
We fabricated Pt/NiO/Pt capacitor structures with various bottom electrode thicknesses, $t_{BE}$, and investigated their resistance switching behaviors. The capacitors with $t_{BE} \geq 50$ nm exhibited typical unipolar resistance memory…
Voltage-controlled resistive switching is demonstrated in various gap systems on SiO2 substrate. The nanosized gaps are made by different means using different materials including metal, semiconductor, and metallic nonmetal. The switching…
Memristors are prominent passive circuit elements with promising futures for energy-efficient in-memory processing and revolutionary neuromorphic computation. State-of-the-art memristors based on two-dimensional (2D) materials exhibit…
In this paper, we investigate the phase transitions and critical behavior of a nonlinear magnetically charged rotating AdS black hole, with a particular emphasis on the influence of a quintessence field. Our comprehensive thermodynamic…
We report on exchange bias effects in 10 nm particles of Pr0.5Ca0.5MnO3 which appear as a result of competing interactions between the ferromagnetic (FM)/anti-ferromagnetic (AFM) phases. The fascinating new observation is the demonstration…
This study explores heat transfer mechanisms in heat pipes with sub-critical nanopores using coarse-grained molecular dynamics (CGMD) simulations, aiming to enhance thermal management in nanoscale applications. With the increasing need for…
Electrical switching of antiferromagnets (AFM) is critical for AFM spintronics. However, electrical pulse-induced Neel vector reorientation in AFM insulators, while predicted to occur at much faster timescales than ferromagnetic switching,…
Gradual switching between multiple resistance levels is desirable for analog in-memory computing using resistive random-access memory (RRAM). However, the filamentary switching of $HfO_x$-based conventional RRAM often yields only two stable…
Finite-temperature micromagnetics simulations are employed to study the magnetization-switching dynamics driven by a field applied at an angle to the long axis of an iron nanopillar. A bi-modal distribution in the switching times is…
Basing on 2D computer simulation of physical processes in high-voltage reversibly-switched dynistors (RSD) important peculiarities of their submicrosecond pulse performance mechanisms have been studied. It is characteristic that on early…
The writing energy for reversing the magnetization of the free layer in a magnetic tunnel junction (MTJ) is a key figure of merit for comparing the performances of magnetic random access memories with competing technologies. Magnetization…
Comparative analysis of second harmonic generation in ordinary and backward-wave settings is presented. Extraordinary properties of frequency doubling nonlinear optical reflectivity and pulse shaping through phase matching of ordinary and…
We report the results of a numerical study of nonequilibrium steady states for a class of Hamiltonian models. In these models of coupled matter-energy transport, particles exchange energy through collisions with pinned-down rotating disks.…