相关论文: Electrical Switching Dynamics in Circular and Rect…
Electric pulse induced resistance (EPIR) switching hysteresis loops for Pr0.7Ca0.7MnO3 (PCMO) perovskite oxide films were found to exhibit an additional sharp "shuttle peak" around the negative pulse maximum for films deposited in an oxygen…
An analysis of the evolutionary trends in the ground state geometries of Na$_{55}$ to Na$_{62}$ reveals Na$_{58}$, an electronic closed--shell system, shows namely an electronically driven spherical shape leading to a disordered but compact…
Non-volatile resistive switching is demonstrated in memristors with nanocrystalline molybdenum disulfide (MoS$_2$) as the active material. The vertical heterostructures consist of silicon, vertically aligned MoS$_2$ and chrome / gold metal…
We report an electrically actuated, low-loss non-volatile optical switch based on the phase-change material (PCM) Sb2Se3 integrated on a silicon nitride (Si3N4) platform. The device is fabricated using an 8-inch wafer-scale process flow,…
Scalable programmable photonic integrated circuits (PICs) can potentially transform the current state of classical and quantum optical information processing. However, traditional means of programming, including thermo-optic, free carrier…
Devices for nano- and molecular size electronics are currently a focus of research aimed at an efficient current rectification and switching. A few generic molecular scale devices are reviewed here on the basis of first-principles and model…
This paper studies the effects of mixed convection fluid motion and heat transmission of Al2O3-Water nanofluid in a square enclosure including two heated obstacles, with temperature and nanoparticle concentration being determined by the…
Memristive devices, whose resistance can be controlled by applying a voltage and further retained, are attractive as possible circuit elements for neuromorphic computing. This new type of devices poses a number of both technological and…
Polyelectrolyte (PE) hydrogels can dynamically respond to external stimuli, such as changes in pH and temperature, which benefits their use for smart materials and nanodevices with tunable properties. We investigate equilibrium…
Phase change memory devices are typically reset by melt-quenching a material to radically lower its electrical conductance. The high power and concomitantly high current density required to reset phase change materials is the major issue…
Phase change memories (PCM) is an emerging type of non-volatile memory that has shown a strong presence in the data-storage market. This technology has recently attracted significant research interest in the development of non-Von Neumann…
Chalcogenide phase change materials (PCMs) have been extensively applied in data storage, and they are now being proposed for high resolution displays, holographic displays, reprogrammable photonics, and all-optical neural networks. These…
Energy-efficient programmable photonic integrated circuits (PICs) are the cornerstone of on-chip classical and quantum optical technologies. Optical phase shifters constitute the fundamental building blocks which enable these programmable…
Vanadium dioxide (VO$_2$) has received significant interest in the context of nanophotonic metamaterials and memories owing to its reversible insulator-metal transition associated with significant changes in its optical and electronic…
Using the Landau-Ginzburg-Devonshire approach, we study stress-induced transformations of polarization switching in ferrielectric CuInP2S6 nanoparticles for three different shapes: a disk, a sphere, and a needle. Semiconducting properties…
Resistive random-access memories, also known as memristors, whose resistance can be modulated by the electrically driven formation and disruption of conductive filaments within an insulator, are promising candidates for neuromorphic…
Ferromagnetic rings exhibit many novel physical phenomena with promise for potential applications. Here, we focus on switching processes which are fundamental properties of magnetic systems and are especially crucial for data storage…
The nonequilibrium behaviour of a core-shell nanoparticle has been studied by Monte- Carlo simulation. The core consists of Ising spins of $\sigma=1/2$ and the shell contains Ising spins of $S=1$. The interactions within the core and in the…
The spin transfer switching current distribution within a cell was studied in magnetic tunnel junction based structures having alumina barriers with resistance-area product (RA) of 10 to 30 Ohm-um2 and tunneling magneto-resistance (TMR) of…
We experimentally demonstrate low-power-consumption vortex-core switching in magnetic nanodisks using tailored rotating magnetic fields that are produced with orthogonal and unipolar Gaussian-pulse currents. Optimal width of the orthogonal…