相关论文: Quasi-reversible Magnetoresistance in Exchange Spr…

We investigate the spin-dependent transport of GaMnAs-based magnetic tunnel junctions (MTJs) containing a paramagnetic AlMnAs barrier with various thicknesses. The barrier height of AlMnAs with respect to the Fermi level of GaMnAs is…

We report tunnel magnetoresistance (TMR) ratios as high as 472% at room temperature and 804% at 5 K in pseudo-spin valve (SV) CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) annealed at 450oC, which is approaching the theoretically…

Experimental and theoretical studies on transport in semiconductor samples with superconducting electrodes are reported. We focus on the samples close to metal-insulator transition. In metallic samples, a peak of negative magnetoresistance…

We investigate spin-dependent conductance across a magnetic tunnel junction (MTJ) including a ferromagnetic insulating barrier. The MTJ consists of two half-metallic ferromagnetic La2/3Sr1/3MnO3 (LSMO) manganites as electrodes and La2NiMnO6…

Layered topologically non-trivial and trivial semimetals with AFM-type ordering of magnetic sublattice are known to exhibit a negative magnetoresistance that is well correlated with AFM magnetization changes in a magnetic field. This effect…

We demonstrate an exchange bias in (Ga,Mn)As induced by antiferromagnetic coupling to a thin overlayer of Fe. Bias fields of up to 240 Oe are observed. Using element-specific x-ray magnetic circular dichroism measurements, we distinguish a…

Magnetic tunnel junctions with wide band gap semiconductor ZnTe barrier were fabricated. A very low barrier height and sizable magnetoresistance were observed in the Fe/ZnTe/Fe junctions at room temperature. The nonlinear I-V characteristic…

The exchange bias effect is commonly used to shift the coercive field of a ferromagnet. This technique is crucial for the use of magnetic tunnel junctions as logic or memory devices. Therefore, an independent switching of the two…

We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled…

We report the bias voltage controlled inversions of tunneling magnetoresistance (TMR) in magnetic tunnel junctions composed of Fe3GaTe2 electrodes and hBN tunneling barrier, observed at room temperature. The polarity reversal of TMR occurs…

We have studied the magnetoresistance (TMR) of tunnel junctions with electrodes of La2/3Sr1/3MnO3 and we show how the variation of the conductance and TMR with the bias voltage can be exploited to obtain a precise information on the spin…

Exchange coupling between two magnetic layers through an interlayer is of broad interest for numerous recent applications of nano-magnetic systems. In this Letter we study ferromagnetic exchange coupling through amorphous paramagnetic Fe-Ta…

In this paper, we attempt the theoretical modeling of the magnetic tunnel junctions with embedded magnetic and nonmagnetic nanoparticles (NPs). A few abnormal tunnel magnetoresistance (TMR) effects, observed in related experiments, can be…

We study the formation of inhomogeneous magnetization texture in the vicinity of a tunnel junction between two ferromagnetic wires nominally in the antiparallel configuration and its influence on the magnetoresistance of such a device. The…

In conventional metals, modification of electron trajectories under magnetic field gives rise to a magnetoresistance that varies quadratically at low field, followed by a saturation at high field for closed orbits on the Fermi surface.…

We study transport through a ferromagnetic single-electron transistor. The resistance is represented as a path integral, so that systems where the tunnel resistances are smaller than the quantum resistance can be investigated. Beyond the…

Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriers are prepared to examine their stability under large current stress. The devices show magnetoresistance ratios of up to 110 % and an area resistance product of down…

The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias…

Perpendicularly magnetized CoFeB layers with ultra-thin non-magnetic insertion layers are very widely used as the electrodes in magnetic tunnel junctions for spin transfer magnetic random access memory devices. Exchange interactions play a…

The effects of the spin-orbit interaction on the tunneling magnetoresistance of ferromagnet/semiconductor/normal metal tunnel junctions are investigated. Analytical expressions for the tunneling anisotropic magnetoresistance (TAMR) are…