铁磁金属对铁磁半导体的交换偏置
材料科学
2010-05-26 v1 介观与纳米尺度物理
摘要
我们展示了(Ga,Mn)As中由与Fe薄覆盖层的反铁磁耦合诱导的交换偏置。观察到高达240 Oe的偏置场。利用元素特异性X射线磁圆二色性测量，我们区分了强交换耦合的(Ga,Mn)As界面层以及偏置的(Ga,Mn)As薄膜体相。该界面层在室温下仍保持极化。
引用
@article{arxiv.1001.2449,
title = {Exchange bias of a ferromagnetic semiconductor by a ferromagnetic metal},
author = {K. Olejnik and P. Wadley and J. A Haigh and K. W. Edmonds and R. P. Campion and A. W. Rushforth and B. L. Gallagher and C. T. Foxon and T. Jungwirth and J. Wunderlich and S. S. Dhesi and S. Cavill and G. van der Laan and E Arenholz},
journal= {arXiv preprint arXiv:1001.2449},
year = {2010}
}
备注
3 figures, submitted to Physical Review B