Interlayer and interfacial exchange coupling in ferromagnetic metal/semiconductor heterostructures

M. J. Wilson; M. Zhu; R. C. Myers; D. D. Awschalom; P. Schiffer; N. Samarth

doi:10.1103/PhysRevB.81.045319

Interlayer and interfacial exchange coupling in ferromagnetic metal/semiconductor heterostructures

Materials Science 2015-05-13 v2

Authors: M. J. Wilson , M. Zhu , R. C. Myers , D. D. Awschalom , P. Schiffer , N. Samarth

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Abstract

We describe a systematic study of the exchange coupling between a magnetically hard metallic ferromagnet (MnAs) and a magnetically soft ferromagnetic semiconductor (GaMnAs) in bilayer and trilayer heterostructures. An exchange spring model of MnAs/GaMnAs bilayers accounts for the variation of the exchange bias field with layer thickness and composition. We also present evidence for hole-mediated interlayer exchange coupling in MnAs/p-GaAs/\GaMnAs trilayers and study the dependence of the exchange bias field on the thickness of the spacer layer.

Keywords

magnetocaloric effect

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@article{arxiv.0905.3691,
  title  = {Interlayer and interfacial exchange coupling in ferromagnetic metal/semiconductor heterostructures},
  author = {M. J. Wilson and M. Zhu and R. C. Myers and D. D. Awschalom and P. Schiffer and N. Samarth},
  journal= {arXiv preprint arXiv:0905.3691},
  year   = {2015}
}

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Submitted tp Phys. Rev. B

Interlayer and interfacial exchange coupling in ferromagnetic metal/semiconductor heterostructures

Abstract

Keywords

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