Thickness dependence of the exchange bias in epitaxial manganite bilayers

A. L. Kobrinskii; Maria Varela; S. J. Pennycook; A. M. Goldman

doi:10.1103/PhysRevB.79.094405

Thickness dependence of the exchange bias in epitaxial manganite bilayers

Strongly Correlated Electrons 2009-11-13 v2 Materials Science

Authors: A. L. Kobrinskii , Maria Varela , S. J. Pennycook , A. M. Goldman

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Abstract

Exchange bias has been studied in a series of La2/3Ca1/3MnO3 / La1/3Ca2/3MnO3 bilayers grown on (001) SrTiO3 substrates by ozone-assisted molecular beam epitaxy. The high crystalline quality of the samples and interfaces has been verified using high-resolution X-ray diffractometry and Z-contrast scanning transmission electron microscopy with electron energy loss spectroscopy. The dependence of exchange bias on the thickness of the antiferromagnetic layer has been investigated. A critical value for the onset of the hysteresis loop shift has been determined. An antiferromagnetic anisotropy constant has been obtained by fitting the results to the generalized Meiklejohn-Bean model.

Keywords

exchange bias manganite bilayers molecular beam epitaxy antiferromagnetic layer thickness meiklejohn-bean model z-contrast stem

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@article{arxiv.0804.2909,
  title  = {Thickness dependence of the exchange bias in epitaxial manganite bilayers},
  author = {A. L. Kobrinskii and Maria Varela and S. J. Pennycook and A. M. Goldman},
  journal= {arXiv preprint arXiv:0804.2909},
  year   = {2009}
}

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7 pages. 8 figures

Thickness dependence of the exchange bias in epitaxial manganite bilayers

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