中文
相关论文

相关论文: Remote hole-doping of Mott insulators on the nanom…

200 篇论文

We demonstrate that a Mott insulator lightly doped with holes is still an insulator at low temperature even without disorder. Hole localization obtains because the chemical potential lies in a pseudogap which has a vanishing density of…

强关联电子 · 物理学 2009-11-11 Ting-Pong Choy , Philip Phillips

There exist strong experimental evidences for the dimensional cross-over from two to three dimensions as \lan compounds are overdoped. In this paper we describe the dimensional cross-over of the layered correlated metal in the gauge theory…

凝聚态物理 · 物理学 2009-10-28 H. C. Lee , P. B. Wiegmann

Oxides with $4d$/$5d$ transition metal ions are physically interesting for their particular crystalline structures as well as the spin-orbit coupled electronic structures. Recent experiments revealed a series of $4d$/$5d$ transition metal…

材料科学 · 物理学 2017-01-27 Bin Gao , Yakui Weng , Jun-Jie Zhang , Huimin Zhang , Yang Zhang , Shuai Dong

The conductance confined at the interface of complex oxide heterostructures provides new opportunities to explore nanoelectronic as well as nanoionic devices. Herein we show that metallic interfaces can be realized in SrTiO3-based…

Acceptor-doped perovskite oxides like BaZrO$_3$ are showing great potential as materials for renewable energy technologies where hydrogen acts an energy carrier, such as solid oxide fuel cells and hydrogen separation membranes. While ionic…

材料科学 · 物理学 2016-08-24 Anders Lindman , Paul Erhart , Göran Wahnström

In oxide heterostructures, different materials are integrated into a single artificial crystal, resulting in a breaking of inversion-symmetry across the heterointerfaces. A notable example is the interface between polar and non-polar…

Doped SrTiO3 becomes a metal at extremely low doping concentrations n and is even superconducting with the superconducting transition temperature adopting a dome-like shape with the carrier concentration. It is shown here within the…

材料科学 · 物理学 2019-10-08 Annette Bussmann-Holder , Hugo Keller , Arndt Simon , Krystian Roleder , Krzysztof Szot

Tailoring transport properties of strongly correlated electron systems in a controlled fashion counts among the dreams of materials scientists. In copper oxides, varying the carrier concentration is a tool to obtain high-temperature…

Polar metals are rare because free carriers in metals screen electrostatic potential and eliminate internal dipoles. Degenerate doped ferroelectrics may create an approximate polar metallic phase. We use first-principles calculations to…

计算物理 · 物理学 2019-06-03 Chengliang Xia , Yue Chen , Hanghui Chen

Perovskite oxide heteroepitaxy receives much attention because of the possibility to com- bine the diverse functionalities of perovskite oxide building blocks. A general boundary con- dition for the epitaxy is the presence of polar…

We present the concept and experimental realization of polarization-induced bulk electron doping in III-V nitride semiconductors. By exploiting the large polarization charges in the III-V nitrides, we are able to create wide slabs of high…

Polar discontinuities and redox reactions provide alternative paths to create two-dimensional electron liquids (2DELs) at oxide interfaces. Herein, we report high mobility 2DELs at interfaces involving SrTiO3 (STO) achieved using polar…

材料科学 · 物理学 2017-10-24 Y. Z. Chen , R. J. Green , R. Sutarto , F. He , S. Linderoth , G. A. Sawatzky , N. Pryds

At the (001) interface between the two band-insulators LaAlO3 and SrTiO3, a high-mobility electron gas may appear, which has been the object of numerous works over the last four years. Its origin is a subject of debate between the interface…

We report evolution of the two-dimensional electron gas behavior at the NdAlO3/SrTiO3 heterointerfaces with varying thicknesses of the NdAlO3 overlayer. The samples with a thicker NdAlO3 show strong localizations at low temperatures and the…

介观与纳米尺度物理 · 物理学 2015-06-12 A. Annadi , A. Putra , A. Srivastava , X. Wang , Z. Huang , Z. Q. Liu , T. Venkatesan , Ariando

We employ a density-functional theory plus dynamical mean-field theory framework to investigate the correlated electronic structure of the alternating single-layer trilayer (1313) polymorph of La$_3$Ni$_2$O$_7$ under pressure. At ambient…

强关联电子 · 物理学 2024-10-30 Harrison LaBollita , Soumen Bag , Jesse Kapeghian , Antia S. Botana

Photo-doping of Mott insulators or correlated metals can create an unusual metallic state which simultaneously hosts hole-like and electron-like particles. We study the dynamics of this state up to long times, as it passes its kinetic…

强关联电子 · 物理学 2021-05-26 Nagamalleswararao Dasari , Jiajun Li , Philipp Werner , Martin Eckstein

Variety of conducting heterointerfaces have been made between SrTiO3 substrates and thin capping layers of distinctly different oxide materials that can be classified into polar band insulators (e.g. LaAlO3), polar Mott insulators (e.g.…

材料科学 · 物理学 2018-06-26 Meng Zhang , Zheng Chen , Baohua Mao , Qingtian Li , Hai Bo , Tianshuang Ren , Pimo He , Zhi Liu , Yanwu Xie

A series of epitaxial (LaVO3)6m(SrVO3)m superlattices having the same nominal composition as La6/7Sr1/7VO3, a Mott-Hubbard insulator, were grown with pulsed-laser deposition on [001]-oriented SrTiO3 substrates, and their superlattice period…

材料科学 · 物理学 2009-11-13 W. C Sheets , B. Mercey , W. Prellier

The transfer of electrons between a solid surface and adsorbed atomic or molecular species is fundamental in natural and synthetic processes, being at the heart of most catalytic reactions and many sensors. In special cases, metallic…

材料科学 · 物理学 2015-05-28 Yanwu Xie , Yasuyuki Hikita , Christopher Bell , Harold Y. Hwang

By applying an unrestricted Hartree-Fock and a Random Phase approximations to a multiband Peierls-Hubbard Hamiltonian, we study the phonon mode structure in models of transition metal oxides in the presence of intrinsic nanoscale…

强关联电子 · 物理学 2009-11-10 I. Martin , E. Kaneshita , R. J. McQueeney , Z. G. Yu , A. R. Bishop