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相关论文: Remote hole-doping of Mott insulators on the nanom…

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In semiconducting materials, electrostatic gating and light illumination are widely used stimuli to tune the electronic properties of the system. Here, we show a significant enhancement of photoresponse at the conducting interface of…

Moire engineering as a configuration method to twist van der Waals materials has delivered a series of advances in electronics, magnetics and optics. Yet these advances stem from peculiar moire superlattices which form at small specific…

介观与纳米尺度物理 · 物理学 2020-07-15 M. Chen , X. Lin , T. Dinh , Z. Zheng , J. Shen , Q. Ma , H. Chen , P. Jarillo-Herrero , S. Dai

Charge dynamics of (Ti1-xVx)2O3 with x=0-0.06 has been investigated by measurements of charge transport and optical conductivity spectra in a wide temperature range of 2-600K with the focus on the thermally and doping induced…

强关联电子 · 物理学 2009-11-13 M. Uchida , J. Fujioka , Y. Onose , Y. Tokura

The recent discovery of superconductivity in hole-doped infinite-layer nickelates has triggered a great interest in the synthesis of novel nickelate phases, which have primarily been examined in thin film samples. Here, we report the…

强关联电子 · 物理学 2023-08-15 P. Puphal , V. Sundaramurthy , V. Zimmermann , K. Küster , U. Starke , M. Isobe , B. Keimer , M. Hepting

We study the thermoelectric properties of three-dimensional topological insulators with many holes (or pores) in the bulk. We show that at high density of these holes the thermoelectric figure of merit ZT can be large due to the…

介观与纳米尺度物理 · 物理学 2011-09-15 Oleg A. Tretiakov , Ar. Abanov , Jairo Sinova

Many materials exhibit various types of phase transitions at different temperatures, with many also demonstrating polymorphism. Doping materials can significantly alter their conductivity. In light of this, we have investigated the…

材料科学 · 物理学 2024-08-29 Mohammad Abu Thaher Chowdhury , Shumsun Naher Begum

We present a first-principles study of the electronic structures and properties of ideal (atomically sharp) LaAlO3/SrTiO3 (001) heterointerfaces and their variants such as a new class of quantum well systems. We demonstrate the…

材料科学 · 物理学 2015-05-19 Hanghui Chen , Alexie M. Kolpak , Sohrab Ismail-Beigi

In polar-oxide interfaces, a certain number of monolayers (ML) is needed for conductivity to appear. This threshold for conductivity is explained by accumulating sufficient electric potential to initiate charge transfer to the interface.…

Perovskite bilayers with (111)-orientation combine a honeycomb lattice as a key feature with the strongly correlated, multiorbital nature of electrons in transition metal oxides. In a systematic DFT+$U$ study of (111)-oriented…

材料科学 · 物理学 2016-05-04 David Doennig , Santu Baidya , Warren E. Pickett , Rossitza Pentcheva

Recent reports reveal that isothermal chemical doping of hydrogen in correlated complex oxides such as perovskite nickelates (e.g. NdNiO3) can induce a metal-to-insulator transition (MIT) without the need for temperature modulation. In this…

材料科学 · 物理学 2024-05-16 Ronald Warzoha , Brian Donovan , Yifei Sun , Elena Cimpoiasu , Shriram Ramanathan

The cuprate high-temperature superconductors are among the most intensively studied materials, yet essential questions regarding their principal phases and the transitions between them remain unanswered. Generally thought of as doped…

超导电性 · 物理学 2020-03-18 D. Pelc , P. Popčević , G. Yu , M. Požek , M. Greven , N. Barišić

We investigate correlation physics in high-density, two-dimensional electron liquids that reside in narrow SrTiO3 quantum wells. The quantum wells are remotely doped via an interfacial polar discontinuity and the three-dimensional (3D)…

强关联电子 · 物理学 2013-11-26 Pouya Moetakef , Clayton A. Jackson , Jinwoo Hwang , Leon Balents , S. James Allen , Susanne Stemmer

Layer-by-layer oxide molecular beam epitaxy has been used to synthesize cuprate-nickelate multilayer structures of composition (La$_2$CuO$_4$)$_m$/LaO/(LaNiO$_3$)$_n$. In a combined experimental and theoretical study, we show that these…

Transition metal oxides display a great variety of quantum electronic behaviours where correlations often play an important role. The achievement of high quality epitaxial interfaces involving such materials gives a unique opportunity to…

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but…

材料科学 · 物理学 2016-12-13 Dirk König , Daniel Hiller , Sebastian Gutsch , Margit Zacharias , Sean Smith

Organic dopants are frequently used to surface-dope inorganic semiconductors. The resulted hybrid inorganic-organic materials have a crucial role in advanced functional materials and semiconductor devices. In this article, we study charge…

材料科学 · 物理学 2017-08-01 Xiaoming Wang , Keivan Esfarjani , Mona Zebarjadi

Electron irradiation is investigated as a way to dope the topological insulator Bi2Te3. For this, p-type Bi2Te3 single crystals have been irradiated with 2.5 MeV electrons at room temperature and electrical measurements have been performed…

材料科学 · 物理学 2013-12-03 C. W. Rischau , B. Leridon , B. Fauqué , V. Metayer , C. J. van der Beek

The dilute lamellar phase of the nonionic surfactant C$_{12}$EO$_5$ was doped with goethite (iron oxide) nanorods up to a fraction of 5 vol. %. The interaction between the inclusions and the host phase was studied by polarized optical…

软凝聚态物质 · 物理学 2015-04-14 Keevin Béneut , Doru Constantin , Patrick Davidson , Arnaud Dessombz , Corinne Chanéac

Superconductivity emerges from the cuprate antiferromagnetic Mott state with hole doping. The resulting electronic structure is not understood, although changes in the state of oxygen atoms appear paramount. Hole doping first destroys the…

超导电性 · 物理学 2012-05-24 Y. Kohsaka , T. Hanaguri , M. Azuma , M. Takano , J. C. Davis , H. Takagi

The physics of doping a Mott insulator is investigated in the presence of a solid-vacuum interface. Using the embedding approach for dynamical mean field theory we show that the change in surface spectral evolution in a doped Mott insulator…

强关联电子 · 物理学 2011-07-12 Reza Nourafkan , Frank Marsiglio
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