相关论文: Large Bi-2212 single crystal growth by the floatin…

We present measurements of the diffusion-limited growth of ice crystals from water vapor at different supersaturation levels in air at a temperature of -15 C. Starting with thin, c-axis ice needle crystals, the subsequent growth…

We report a self-guided and "stimulated" single-crystal growth acceleration effect in static super-saturated aqueous solutions, producing inorganic (KH$_2$PO$_4$) and organic (tetraphenyl-phosphonium-family) nonlinear optical…

Millimeter sized single crystals of Mo3Sb7 are grown using the self-flux technique and a thorough characterization of their structural, magnetic, thermal and transport properties is reported. The structure parameters for the…

Single crystal of La(O,F)BiSe2 was successfully grown for the first time by the CsCl flux method. Single crystal X-ray structural analysis clearly showed that La(O,F)BiSe2 crystalizes with space group P4/nmm (lattice parameters a =…

Magnesium diboride crystals were grown with low melting alloy flux. The sample with superconductivity at 38.3 K was prepared in the zinc-magnesium flux and another sample with superconductivity at 34.11 K was prepared in the…

A novel bottom-cooling high-temperature solution growth technique is developed for growing large-sized relaxor ferroelectric 0.91Pb(Zn1/3Nb2/3O3)-0.09PbTiO3 (PZN-PT) single crystals. During the growth, an inverse temperature gradient is…

We report on study of the vortex liquid in Pb-doped Bi-2223 single crystal using the in-plane resistivity measurements as a function of temperature and magnetic field up to 6T applied perpendicular to CuO planes. Below Tc at the upper part…

This work examined the effect of macrostep height on the growth velocity of a vicinal surface during reaction- (interface-) limited crystal growth under non-equilibrium steady state conditions. The Monte Carlo method was employed, based on…

Cd-doped La(O,F)BiS2 single crystals were grown using a CsCl/KCl flux. The grown crystals have a plate-like shape with ~1-2 mm square size in a well-developed ab-plane. The Cd doping in the crystals was successfully characterized by single…

We report on transport measurements in a Bi-2212 single crystal with columnar defects parallel to the c-axis. The tilt of the magnetic field away from the direction of the tracks is studied for filling factors f=B_z/B_phi<1. Near the Bose…

We present a study on the growth and characterization of high-quality single-layer MoS$_2$ with a single orientation, i.e. without the presence of mirror domains. This single orientation of the MoS$_2$ layer is established by means of x-ray…

We have investigated the effect of synthesis and growth conditions on the magnetic, structural, and compositional properties of pyrochlore oxide holmium titanate and demonstrate a method for growing high quality stoichiometric single…

Despite numerous studies on three-dimensional topological insulators (3D TIs), the controlled growth of high quality (bulk-insulating and high mobility) TIs remains a challenging subject. This study investigates the role of growth methods…

Self-nucleation in CdZnTe crystal growth remains a significant challenge, despite numerous attempts to achieve large-grain single crystals by restricting multi-nucleation during growth process using the traveling heater method. In this…

In this report, we show the results of the STM/STS study on the Bi2223 single crystals whose doping levels were ranging from an optimally doped to an underdoped region. Bi2223 single crystals were grown by a TSFZ method and their doping…

We have measured the microwave dissipation at 10 GHz in a Bi2Sr2CaCu2O8 single crystal, between 75 and 50 K, as a function of the static magnetic field applied parallel to the c axis. We observe a clear-cut onset in the dissipation…

We report single crystal growth of the series of CeTAl$_3$ compounds with T = Cu, Ag, Au, Pd and Pt by means of optical float zoning. High crystalline quality was confirmed in a thorough characterization process. With the exception of…

A method for obtaining a smooth, single crystal diamond surface is presented, whereby a sacrificial defective layer is created by implantation and graphitized by annealing before being selectively etched. We have used O+ at 240 keV, the…

Here, we report the crystal growth, physical and transport properties of Bi1-xSbx (x = 0.05, 0.1 and 0.15) topological insulator. Single crystals of Bi1-xSbx (x = 0.05, 0.1 and 0.15) were grown by melting bismuth and antimony together using…

The Sb2Te3 crystals are grown using the conventional self flux method via solid state reaction route, by melting constituent elements (Sb and Te) at high temperature (850 C), followed by slow cooling (2 C per hour).The weak anti…