中文
相关论文

相关论文: The infrared conductivity of graphene

200 篇论文

We compute the DC and the optical conductivity of graphene for finite values of the chemical potential by taking into account the effect of disorder, due to mid-gap states (unitary scatterers) and charged impurities, and the effect of both…

介观与纳米尺度物理 · 物理学 2009-11-13 T. Stauber , N. M. R. Peres , A. H. Castro Neto

We theoretically revisit graphene transport properties as a function of carrier density, taking into account possible correlations in the spatial distribution of the Coulomb impurity disorder in the environment. We find that the charged…

介观与纳米尺度物理 · 物理学 2011-10-06 Qiuzi Li , E. H. Hwang , E. Rossi , S. Das Sarma

The ground-state and the transport properties of graphene subject to the potential of in-plane charged impurities are studied. The screening of the impurity potential is shown to be nonlinear, producing a fractal structure of electron and…

介观与纳米尺度物理 · 物理学 2009-12-02 M. M. Fogler

We review the physics of charged impurities in the vicinity of graphene. The long-range nature of Coulomb impurities affects both the nature of the ground state density profile as well as graphene's transport properties. We discuss the…

介观与纳米尺度物理 · 物理学 2009-05-29 S. Adam , E. H. Hwang , E. Rossi , S. Das Sarma

Understanding disorder in graphene is essential for electronic applications; in contrast to conventional materials, the extraordinarily low electron-phonon scattering1, 2 in graphene implies that disorder3-7 dominates its resistivity even…

介观与纳米尺度物理 · 物理学 2011-11-14 Jun Yan , Michael S. Fuhrer

It is shown that a ``vacuum polarization'' induced by Coulomb potential in graphene leads to a strong suppression of electric charges even for undoped case (no charge carriers). A standard linear response theory is therefore not applicable…

介观与纳米尺度物理 · 物理学 2007-05-23 M. I. Katsnelson

We calculate the temperature dependent conductivity of graphene in the presence of randomly distributed Coulomb impurity charges arising from the temperature dependent screening of the Coulomb disorder without any phonons. The purely…

介观与纳米尺度物理 · 物理学 2009-05-22 E. H. Hwang , S. Das Sarma

We discuss the possibility of superconductivity in graphene taking into account both electron-phonon and electron-electron Coulomb interactions. The analysis is carried out assuming that the Fermi energy is far away from the Dirac points,…

超导电性 · 物理学 2011-12-13 M. Einenkel , K. B. Efetov

We review our recent work on the physical mechanisms limiting the mobility of graphene on SiO2. We have used intentional addition of charged scattering impurities and systematic variation of the dielectric environment to differentiate the…

材料科学 · 物理学 2009-06-10 J. -H. Chen , C. Jang , M. Ishigami , S. Xiao , E. D. Williams , M. S. Fuhrer

We study both monolayer and bilayer graphene transport properties taking into account the presence of correlations in the spatial distribution of charged impurities. In particular we find that the experimentally observed sublinear scaling…

介观与纳米尺度物理 · 物理学 2012-07-10 Qiuzi Li , E. H. Hwang , E. Rossi

We theoretically consider the effect of plasmon collective modes on the frequency-dependent conductivity of graphene in the presence of the random static potential of charged impurities. We develop an equation of motion approach suitable…

介观与纳米尺度物理 · 物理学 2013-08-09 K. Kechedzhi , S. Das Sarma

We theoretically investigate the double-resonance Raman spectrum of monolayer graphene down to infrared laser excitation energies. By using first-principles density functional theory calculations, we improve upon previous theoretical…

介观与纳米尺度物理 · 物理学 2025-05-21 Lorenzo Graziotto , Francesco Macheda , Thibault Sohier , Matteo Calandra , Francesco Mauri

The effect of Coulomb scattering on graphene conductivity in field effect transistor structures is discussed. Inter-particle scattering (electron-electron, hole-hole, and electron-hole) and scattering on charged defects are taken into…

介观与纳米尺度物理 · 物理学 2009-11-13 V. Vyurkov , V. Ryzhii

We present electron transport measurements on lithographically defined and etched graphene nanoconstrictions with different aspect ratios including different lengths (L) and widths (W). A roughly length-independent disorder induced…

介观与纳米尺度物理 · 物理学 2011-04-13 B. Terrés , J. Dauber , C. Volk , S. Trellenkamp , U. Wichmann , C. Stampfer

The design of graphene-based composite with high thermal conductivity requires a comprehensive understanding of phonon coupling in graphene. We extended the two-temperature model to coupled groups of phonon. The study give new physical…

介观与纳米尺度物理 · 物理学 2017-10-11 Meng An , Qichen Song , Xiaoxiang Yu , Han Meng , Dengke Ma , Ruiyang Li , Zelin Jin , Baoling Huang , Nuo Yang

We present a first-principles study of the temperature- and density-dependent intrinsic electrical resistivity of graphene. We use density-functional theory and density-functional perturbation theory together with very accurate Wannier…

The effect of substitution atoms on the energy spectrum and the electrical conductivity of graphene was investigated in a Lifshitz one-electron tight-binding model. It is established that the ordering of impurity atoms results in a gap in…

强关联电子 · 物理学 2020-03-05 S. P. Repetsky , I. G. Vyshyvana , S. P. Kruchinin , R. M. Melnyk , A. P. Polishchuk

One of the most distinctive features of graphene is its huge inter-Landau-level splitting in experimentally attainable magnetic fields which results in the room-temperature quantum Hall effect. In this paper we calculate the longitudinal…

介观与纳米尺度物理 · 物理学 2015-12-07 A. M. Alexeev , R. R. Hartmann , M. E. Portnoi

We consider the problem of screening of an electrically charged impurity in a clean graphene sheet. When electron-electron interactions are neglected, the screening charge has a sign opposite to that of the impurity, and is localized near…

强关联电子 · 物理学 2007-11-29 Rudro R. Biswas , Subir Sachdev , Dam T. Son

The temperature dependence of the mobility in suspended graphene samples is investigated. In clean samples, flexural phonons become the leading scattering mechanism at temperature $T \gtrsim 10\,\,$K, and the resistivity increases…

‹ 上一页 1 2 3 10 下一页 ›