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相关论文: Tunneling anisotropic magnetoresistance in multila…

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Tunneling anisotropic magnetoresistance (TAMR) effect, discovered recently in (Ga,Mn)As ferromagnetic semiconductors, arises from spin-orbit coupling and reflects the dependence of the tunneling density of states in a ferromagnetic layer on…

材料科学 · 物理学 2009-11-11 A. B. Shick , F. Maca , J. Masek , T. Jungwirth

We investigated the tunneling anisotropic magnetoresistance (TAMR) in thick hcp Co films at cryogenic temperatures using scanning tunneling microscopy. At around -350 mV, a strong TAMR up to 30\% is found with a characteristic voltage…

介观与纳米尺度物理 · 物理学 2018-07-04 Marie Hervé , Timofey Balashov , Arthur Ernst , Wulf Wulfhekel

We report a large tunneling anisotropic magnetoresistance (TAMR) in a thin (Ga,Mn)As epilayer with lateral nanoconstrictions. The observation establishes the generic nature of this effect, which originates from the spin-orbit coupling in a…

The tunnelling anisotropic magnetoresistance (TAMR) effect describes the sensitivity of spin-polarized electron transport to the orientation of the magnetization with respect to the crystallographic axes. As the TAMR effect requires only a…

材料科学 · 物理学 2015-06-19 Nuala M. Caffrey , Silke Schröder , Paolo Ferriani , Stefan Heinze

We report the observation of tunneling anisotropic magnetoresistance (TAMR) in an organic spin-valve-like structure with only one ferromagnetic electrode. The device is based on a new high mobility perylene diimide-based n-type organic…

材料科学 · 物理学 2013-05-29 M. Gruenewald , M. Wahler , M. Michelfeit , C. Gould , R. Schmidt , F. Wuerthner , G. Schmidt , L. W. Molenkamp

We observe spin-valve-like effects in nano-scaled thermally evaporated Co/AlOx/Au tunnel junctions. The tunneling magnetoresistance is anisotropic and depends on the relative orientation of the magnetization direction of the Co electrode…

科普物理 · 物理学 2015-05-13 R. S. Liu , L. Michalak , C. M. Canali , L. Samuelson , H. Pettersson

Using a simple quantum-mechanical model, we explore a tunneling anisotropic magnetoresistance (TAMR) effect in ferroelectric tunnel junctions (FTJs) with a ferromagnetic electrode and a ferroelectric barrier layer, which spontaneous…

介观与纳米尺度物理 · 物理学 2019-09-04 A. Alexandrov , M. Ye. Zhuravlev , Evgeny Y. Tsymbal

We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed two-fold anisotropy of the resistance can be switched by reversing the bias voltage,…

介观与纳米尺度物理 · 物理学 2009-11-11 J. Moser , A. Matos-Abiague , D. Schuh , W. Wegscheider , J. Fabian , D. Weiss

We performed a first-principles study of the tunneling anisotropic magneto-resistance (TAMR) in Ag(Ir,Pt)$/$MgO$/$Fe junctions. Enhanced TAMR with ideal and skewed fourfold angular dependence is found in-plane and out-of-plane TAMR of the…

应用物理 · 物理学 2022-09-21 Hui-Min Tang , Shi-zhuo Wang , Xin-tao Jia

We show that Pb and Bi adatoms and dimers have a large tunneling anisotropic magnetoresistance (TAMR) of up to 60% when adsorbed on a magnetic transition-metal surface due to strong spin-orbit coupling and the hybridization of 6p orbitals…

材料科学 · 物理学 2019-09-18 Soumyajyoti Haldar , Mara Gutzeit , Stefan Heinze

The effects of the spin-orbit interaction on the tunneling magnetoresistance of ferromagnet/semiconductor/normal metal tunnel junctions are investigated. Analytical expressions for the tunneling anisotropic magnetoresistance (TAMR) are…

介观与纳米尺度物理 · 物理学 2009-05-06 Alex Matos-Abiague , Jaroslav Fabian

We demonstrate tunnel magnetoresistance (TMR) junctions based on a tri layer system consisting of an epitaxial NiMnSb, aluminum oxide and CoFe tri layer. The junctions show a tunnelling magnetoresistance of Delta R/R of 8.7% at room…

材料科学 · 物理学 2009-11-11 J. Liu , E. Girgis , P. Bach , C. Ruester , C. Gould , G. Schmidt , L. W. Molenkamp

First-principles calculations of electron tunneling transport in Ni and Co break junctions reveal strong dependence of the conductance on the magnetization direction, an effect known as tunneling anisotropic magnetoresistance (TAMR). The…

介观与纳米尺度物理 · 物理学 2014-06-06 J. D. Burton , R. F. Sabirianov , J. P. Velev , O. N. Mryasov , E. Y. Tsymbal

We report a room temperature tunneling anisotropic magnetoresistance in Co/Al2O3/NiFe junctions containing magnetic electrodes oxidized prior to forming the Al2O3 layer. A significant change in a tunnel magnetoresistance is observed when…

其他凝聚态物理 · 物理学 2007-05-23 A. N. Grigorenko , K. S. Novoselov , D. J. Mapps

We theoretically investigate the angular and spin dependent transport in normal-metal/helical-multiferroic/ferromagnetic heterojunctions. We find a tunneling anisotropic magnetoresistance (TAMR) effect due to the spiral magnetic order in…

介观与纳米尺度物理 · 物理学 2015-05-18 Chenglong Jia , Jamal Berakdar

Temperature- and bias voltage-dependent transport measurements of magnetic tunnel junctions (MTJs) with perpendicularly magnetized Co/Pd electrodes are presented. Magnetization measurements of the Co/Pd multilayers are performed to…

材料科学 · 物理学 2015-05-19 Zoë Kugler , Volker Drewello , Markus Schäfers , Jan Schmalhorst , Günter Reiss , Andy Thomas

We theoretically investigate quantum transport through single-molecule magnet (SMM) junctions with ferromagnetic and normal-metal leads in the sequential regime. The current obtained by means of the rate-equation gives rise to the tunneling…

介观与纳米尺度物理 · 物理学 2015-06-05 Haiqing Xie , Qiang Wang , Hujun Jiao , J. -Q. Liang

We report on the structural, electric and magnetic properties of $(\mathrm{Ni}_x\mathrm{Co}_{1-x})\mathrm{B}$ ferromagnetic nanotubes, displaying azimuthal magnetization. The tubes are fabricated using electroless plating in polycarbonate…

We investigate the thickness and temperature dependence of a series of Ni0:8Fe0:2/Ir0:2Mn0:8 bilayer samples with varying thickness ratio of the ferromagnet/antiferromagnet (tFM/tAFM) in order to explore the exchange coupling strengths in…

介观与纳米尺度物理 · 物理学 2016-08-02 H. Reichlova , V. Novak , Y. Kurosaki , M. Yamada , H. Yamamoto , A. Nishide , J. Hayakawa , H. Takahashi , M. Marysko , J. Wunderlich , X. Marti , T. Jungwirth

Based on general symmetry considerations we investigate how the dependence of the tunneling anisotropic magnetoresistance (TAMR) on the magnetization direction is determined by the specific form of the spin-orbit coupling field. By…

介观与纳米尺度物理 · 物理学 2009-04-17 A. Matos-Abiague , M. Gmitra , J. Fabian
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