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We report the realization of a hybrid superconductor-quantum dot device by means of top-down nanofabrication starting from a two dimensional electron gas in a InGaAs/InAlAs semiconductor heterostructure. The quantum dot is defined by…

介观与纳米尺度物理 · 物理学 2011-04-15 Fabio Deon , Vittorio Pellegrini , Francesco Giazotto , Giorgio Biasiol , Lucia Sorba , Fabio Beltram

We report on the realization of a few-electron double quantum dot defined in a two-dimensional electron gas by means of surface gates on top of a GaAs/AlGaAs heterostructure. Two quantum point contacts (QPCs) are placed in the vicinity of…

Quasi-static transport measurements are employed to characterize a few electron quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure. The gate geometry allows observations on one and the same electron droplet within a wide…

介观与纳米尺度物理 · 物理学 2009-08-19 A. K. Huettel , K. Eberl , S. Ludwig

A serial triple quantum dot (TQD) electrostatically defined in a GaAs/AlGaAs heterostructure is characterized by using a nearby quantum point contact as charge detector. Ground state stability diagrams demonstrate control in the regime of…

介观与纳米尺度物理 · 物理学 2007-09-03 D. Schröer , A. D. Greentree , L. Gaudreau , K. Eberl , L. C. L. Hollenberg , J. P. Kotthaus , S. Ludwig

The interaction between electrons in arrays of electrostatically defined quantum dots is naturally described by a Fermi-Hubbard Hamiltonian. Moreover, the high degree of tunability of these systems make them a powerful platform to simulate…

介观与纳米尺度物理 · 物理学 2018-05-10 Uditendu Mukhopadhyay , Juan Pablo Dehollain , Christian Reichl , Werner Wegscheider , Lieven M. K. Vandersypen

Quantum dot lattices (QDLs) have the potential to allow for the tailoring of optical, magnetic and electronic properties of a user-defined artificial solid. We use a dual gated device structure to controllably tune the potential landscape…

介观与纳米尺度物理 · 物理学 2015-06-04 Srijit Goswami , M. A. Aamir , Christoph Siegert , Michael Pepper , Ian Farrer , David A. Ritchie , Arindam Ghosh

GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation…

介观与纳米尺度物理 · 物理学 2021-03-11 Tomohiro Otsuka , Takaya Abe , Takahito Kitada , Norikazu Ito , Taketoshi Tanaka , Ken Nakahara

We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more…

介观与纳米尺度物理 · 物理学 2015-03-19 W. Y. Mak , F. Sfigakis , K. Das Gupta , O. Klochan , H. E. Beere , I. Farrer , J. P. Griffiths , G. A. C. Jones , A. R. Hamilton , D. A. Ritchie

We present an inverted GaAs 2D electron gas with self-assembled InAs quantum dots in close proximity, with the goal of combining quantum transport with quantum optics experiments. We have grown and characterized several wafers -- using…

介观与纳米尺度物理 · 物理学 2014-04-03 F. Dettwiler , P. Fallahi , D. Scholz , E. Reiger , D. Schuh , A. Badolato , W. Wegscheider , D. M. Zumbühl

The transport spectrum of a strongly tunnel-coupled one-electron double quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure is studied. At finite source-drain-voltage we demonstrate the unambiguous identification of the…

介观与纳米尺度物理 · 物理学 2007-05-23 A. K. Huettel , S. Ludwig , H. Lorenz , K. Eberl , J. P. Kotthaus

We demonstrate the development of a double quantum dot with an integrated charge sensor fabricated in undoped GaAs/AlGaAs heterostructures using a double top-gated design. Based on the evaluation of the integrated charge sensor, the double…

介观与纳米尺度物理 · 物理学 2015-06-22 Hai-Ou Li , Gang Cao , Ming Xiao , Jie You , Da Wei , Tao Tu , Guang-Can Guo , Hong-Wen Jiang , Guo-Ping Guo

We use a nonlinear Schroedinger-Poisson equation to describe two interacting electrons with opposite spins confined in a parabolic potential, a quantum dot. We propose an effective form of the Poisson equation taking into account the…

介观与纳米尺度物理 · 物理学 2013-07-01 Gilbert Reinisch , Vidar Gudmundsson

We employ density functional theory to calculate the self consistent electronic structure, free energy and linear source-drain conductance of a lateral semiconductor quantum dot patterned via surface gates on the 2DEG formed at the…

凝聚态物理 · 物理学 2009-10-28 M. Stopa

A practical experimental scheme for a quantum simulator of strongly correlated electrons is proposed. Our scheme employs electrons confined in a two dimensional electron gas in a GaAs/AlGaAs heterojunction. Two surface acoustic waves are…

强关联电子 · 物理学 2009-11-11 Tim Byrnes , Patrik Recher , Na Young Kim , Shoko Utsunomiya , Yoshihisa Yamamoto

A quantum dot fabricated by scanning probe oxidation lithography on a p-type, C-doped GaAs/AlGaAs heterostructure is investigated by low temperature electrical conductance measurements. Clear Coulomb blockade oscillations are observed and…

介观与纳米尺度物理 · 物理学 2008-11-28 Y. Komijani , M. Csontos , T. Ihn , K. Ensslin , D. Reuter , A. D. Wieck

We measure the energy distribution of electrons passing through a two-dimensional electron gas using a scanning probe microscope. We present direct spatial images of coherent electron wave flow from a quantum point contact formed in a…

介观与纳米尺度物理 · 物理学 2015-06-24 B. J. LeRoy , A. C. Bleszynski , M. A. Topinka , R. M. Westervelt , S. E. J. Shaw , E. J. Heller , K. D. Maranowski , A. C. Gossard

In quantum nanoelectronics, numerical simulations have become an ubiquitous tool. Yet the comparison with experiments is often done at a qualitative level or restricted to a single device with a handful of fitting parameters. In this work,…

We present experimental magnetotunneling results and atomistic pseudopotential calculations of quasiparticle electron and hole wave functions of self-assembled InAs/GaAs quantum dots. The combination of a predictive theory along with the…

材料科学 · 物理学 2012-03-08 G. Bester , D. Reuter , L. He , A. Zunger , P. Kailuweit , A. D. Wieck , U. Zeitler , J. C. Maan , O. Wibbelhoff , A. Lorke

We present measurements of the electron temperature using gate defined quantum dots formed in a GaAs 2D electron gas in both direct transport and charge sensing mode. Decent agreement with the refrigerator temperature was observed over a…

介观与纳米尺度物理 · 物理学 2015-09-08 D. Maradan , L. Casparis , T. -M. Liu , D. E. F. Biesinger , C. P. Scheller , D. M. Zumbühl , J. Zimmerman , A. C. Gossard

The growth-diection quantization of confined electron gas in a GaAs/AlGaAs based quantum well structure is obtained in the Kohn-Sham iterative computational scheme. The longitudinal conductance at low temperatures, in the presence of…

介观与纳米尺度物理 · 物理学 2009-01-14 Partha Goswami , Garima Puneyani , Avinashi Kapoor
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