Quantum dot lattices (QDLs) have the potential to allow for the tailoring of optical, magnetic and electronic properties of a user-defined artificial solid. We use a dual gated device structure to controllably tune the potential landscape in a GaAs/AlGaAs two-dimensional electron gas, thereby enabling the formation of a periodic QDL. The current-voltage characteristics, I(V), follow a power law, as expected for a QDL. In addition, a systematic study of the scaling behavior of I(V) allows us to probe the effects of background disorder on transport through the QDL. Our results are particularly important for semiconductor-based QDL architectures which aim to probe collective phenomena.
@article{arxiv.1202.3267,
title = {Transport Through an Electrostatically Defined Quantum Dot Lattice in a Two-Dimensional Electron Gas},
author = {Srijit Goswami and M. A. Aamir and Christoph Siegert and Michael Pepper and Ian Farrer and David A. Ritchie and Arindam Ghosh},
journal= {arXiv preprint arXiv:1202.3267},
year = {2015}
}