Electrostatic confinement in semiconductors provides a flexible platform for the emulation of interacting electrons in a two-dimensional lattice, including in the presence of gauge fields. This combination offers the potential to realize a wide host of quantum phases. Here we present a measurement and fabrication scheme that builds on capacitance spectroscopy and allows for the independent control of density and periodic potential strength imposed on a two-dimensional electron gas. We characterize disorder levels and (in)homogeneity and develop and optimize different gating strategies at length scales where interactions are expected to be strong. A continuation of these ideas might see to fruition the emulation of interaction-driven Mott transitions or Hofstadter butterfly physics.
@article{arxiv.1709.09058,
title = {A capacitance spectroscopy-based platform for realizing gate-defined electronic lattices},
author = {T. Hensgens and U. Mukhopadhyay and P. Barthelemy and S. Fallahi and G. C. Gardner and C. Reichl and W. Wegscheider and M. J. Manfra and L. M. K. Vandersypen},
journal= {arXiv preprint arXiv:1709.09058},
year = {2019}
}