In this paper we present a computational procedure that utilizes real-space grids to obtain high precision approximations of electrostatically confined few-electron states such as those that arise in gated semiconductor quantum dots. We use the Full Configuration Interaction (FCI) method with a continuously adapted orthonormal orbital basis to approximate the ground and excited states of such systems. We also introduce a benchmark problem based on a realistic analytical electrostatic potential for quantum dot devices. We show that our approach leads to highly precise computed energies and energy differences over a wide range of model parameters. The analytic definition of the benchmark allows for a collection of tests that are easily replicated, thus facilitating comparisons with other computational approaches.
@article{arxiv.2203.00082,
title = {High-precision real-space simulation of electrostatically-confined few-electron states},
author = {Christopher R. Anderson and Mark F. Gyure and Sam Quinn and Andrew Pan and Richard S. Ross and Andrey A. Kiselev},
journal= {arXiv preprint arXiv:2203.00082},
year = {2023}
}