We report the magneto-transport properties of a two-dimensional electron gas in a modulation-doped AlGaAs/GaAs heterostructure subjected to a lateral potential with honeycomb geometry. Periodic oscillations of the magneto-resistance and a delocalized-localized transition are shown by applying a gate voltage. We argue that electrons in such artificial-graphene lattices offer a promising approach for the simulation of quantum phases dictated by Coulomb interactions.
@article{arxiv.1007.3168,
title = {Delocalized-localized transition in a semiconductor two-dimensional honeycomb lattice},
author = {G. De Simoni and A. Singha and M. Gibertini and B. Karmakar and M. Polini and V. Piazza and L. N. Pfeiffer and K. W. West and F. Beltram and V. Pellegrini},
journal= {arXiv preprint arXiv:1007.3168},
year = {2010}
}