We study transport of indirect excitons in GaAs/AlGaAs coupled quantum wells in linear lattices created by laterally modulated gate voltage. The localization-delocalization transition (LDT) for transport across the lattice was observed with reducing lattice amplitude or increasing exciton density. The exciton interaction energy at the transition is close to the lattice amplitude. These results are consistent with the model, which attributes the LDT to the interaction-induced percolation of the exciton gas through the external potential. We also discuss applications of the lattice potentials for estimating the strength of disorder and exciton interaction.
@article{arxiv.0901.1349,
title = {Localization-Delocalization Transition of Indirect Excitons in Lateral Electrostatic Lattices},
author = {M. Remeika and J. C. Graves and A. T. Hammack and A. D. Meyertholen and M. M. Fogler and L. V. Butov and M. Hanson and A. C. Gossard},
journal= {arXiv preprint arXiv:0901.1349},
year = {2009}
}