We introduced an elevated trap technique and exploited it for lowering the effective temperature of indirect excitons. We observed narrow photoluminescence lines which correspond to the emission of individual states of indirect excitons in a disorder potential. We studied the effect of exciton-exciton interaction on the localized and delocalized exciton states and found that the homogeneous line broadening increases with density and dominates the linewidth at high densities.
@article{arxiv.0804.4886,
title = {Localization and interaction of indirect excitons in GaAs coupled quantum wells},
author = {Alexander High and Aaron Hammack and Leonid Butov and Leonidas Mouchliadis and Alexei Ivanov and Micah Hanson and Arthur Gossard},
journal= {arXiv preprint arXiv:0804.4886},
year = {2010}
}