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The radiation hardness of passive CMOS pixel sensors fabricated in 150 nm LFoundry technology is investigated. CMOS process lines are especially of interest for large-scale silicon detectors as they offer high production throughput at…

Ultrathin microscale resistive thermometers are of key value to many applications. Here we have fabricated a laser machined 50 ${\mu}$m wide and 50 nm thick serpentine Pt thin film sensor capable of sensing temperatures up to 650 ${^\circ}$…

We present a design for a tunneling-current-assisted scanning near-field microwave microscope. For stable operation at cryogenic temperatures, making a small and rigid microwave probe is important. Our coaxial resonator probe has a length…

介观与纳米尺度物理 · 物理学 2016-06-13 Hideyuki Takahashi , yoshinori imai , Atsutaka Maeda

This work presents a self-heating study of a 40-nm bulk-CMOS technology in the ambient temperature range from 300 K down to 4.2 K. A custom test chip was designed and fabricated for measuring both the temperature rise in the MOSFET channel…

应用物理 · 物理学 2021-06-16 P. A. 't Hart , M. Babaie , A. Vladimirescu , F. Sebastiano

Recent advances in increasing the spectroscopic energy resolution in scanning tunneling microscopy (STM) have been achieved by integrating electron spin resonance (ESR) with STM. Here, we demonstrate the design and performance of a…

The ability to probe nanoscale heat flow in a material is often limited by lack of spatial resolution. Here, we use a diamond-nanocrystal-hosted nitrogen-vacancy centre attached to the apex of a silicon thermal tip as a local temperature…

介观与纳米尺度物理 · 物理学 2015-11-24 Abdelghani Laraoui , Halley Aycock-Rizzo , Yang Gao , Xi Lu , Elisa Riedo , Carlos A. Meriles

This study presents a comprehensive methodology for determining the thermal conductivity (TC) of materials with high reliability. The methodology addresses issues such as surface topographical variations and substrate interference by…

材料科学 · 物理学 2025-05-19 Mohsen Dehbashi , Anna Kazmierczak-Balata , Jerzy Bodzenta

The next generation of ultra-low-noise cryogenic detectors for space science applications require continued exploration of materials characteristics at low temperatures. The low noise and good energy sensitivity of current Transition Edge…

介观与纳米尺度物理 · 物理学 2011-02-01 D. J. Goldie , D. M. Glowacka , K. Rostem† , S. Withington

Cryogenic characterization and modeling of 0.18um CMOS technology (1.8V and 5V) are presented in this paper. Several PMOS and NMOS transistors with different width to length ratios(W/L) were extensively characterized under various bias…

应用物理 · 物理学 2019-01-18 Zhen Li , Chao Luo , Tengteng Lu , Jun Xu , Weicheng Kong , Guoping Guo

Temperature sensors with micro- and nanoscale spatial resolution have long been explored for their potential to investigate the details of physical systems at an unprecedented scale. In particular, the rapid miniaturization of transistor…

We have built a variable temperature scanning probe microscope (SPM) that covers 4.6 K - 180 K and up to 7 Tesla whose SPM head fits in a 52 mm bore magnet. It features a temperature-controlled sample stage thermally well isolated from the…

仪器与探测器 · 物理学 2017-11-22 Jin-Oh Jung , Seokhwan Choi , Yeonghoon Lee , Jinwoo Kim , Donghyun Son , Jhinhwan Lee

Efficient thermal management is critical for cryogenic CMOS circuits, where local heating can compromise device performance and qubit coherence. Understanding heat flow at the nanoscale in these multilayer architectures requires localized,…

We report local time-resolved thermometry in a silicon nanowire quantum dot device designed to host a linear array of spin qubits. Using two alternative measurement schemes based on rf reflectometry, we are able to probe either local…

This study explores the potentialities of Scanning Thermal Microscopy (SThM) technique as a tool for measuring thermal transporting properties of carbon-derived materials issued from thermal conversion of organic polymers, such as the most…

应用物理 · 物理学 2022-02-10 K. Kondratenko , D. Hourlier , D. Vuillaume , S. Lenfant

Scanning Probe Microscopy is used to study and quantify the nanoscale electric phenomena in the two classes of oxide systems, namely transport at electroactive grain boundaries and surface behavior of ferroelectric materials. Scanning…

材料科学 · 物理学 2007-05-23 Sergei V. Kalinin

A high-sensitivity thermal sensing is demonstrated by coating a layer of polydimethylsiloxane (PDMS) on the surface of a silica toroidal microresonator on a silicon wafer. Possessing high-Q whispering gallery modes (WGMs), the PDMS-coated…

Band profiles of electronic devices are of fundamental importance in determining their properties. A technique that can map the band profile of both the interior and edges of a device at the nanometer scale is highly demanded. Conventional…

介观与纳米尺度物理 · 物理学 2020-07-10 Ranran Li , Takashi Taniguchi , Kenji Watanabe , Jiamin Xue

This work introduces a thermoreflectance-based system designed to measure the surface temperature field of activated microelectronic devices at submicron spatial resolution with either a laser or a CCD camera. The article describes the…

材料科学 · 物理学 2007-09-13 P. -L. Komarov , M. G. Burzo , P. -E. Raad

Localized spin states in conventional superconductors at low temperatures are expected to have long decoherence time due to the strong suppression of spin relaxation channels. We propose a scanning tunneling microscopy (STM) experiment…

超导电性 · 物理学 2007-05-23 Jurij Smakov , Ivar Martin , Alexander V. Balatsky

The impact of surface roughness on conductive heat transfer across nanoscale contacts is investigated by means of scanning thermal microscopy. Silicon surfaces with out-of-plane rms roughness of ~0, 0.5, 4, 7 and 11 nm are scanned both…