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相关论文: Shot Noise in Graphene

200 篇论文

We investigate the current noise in HgTe-based quantum wells with an inverted band structure in the regime of disordered edge transport. Consistent with previous experiments, the edge resistance strongly exceeds $h/e^2$ and weakly depends…

介观与纳米尺度物理 · 物理学 2015-09-02 E. S. Tikhonov , D. V. Shovkun , Z. D. Kvon , N. N. Mikhailov , S. A. Dvoretsky , V. S. Khrapai

We show that shot noise in a resonant tunneling diode biased in the negative differential resistance regions of the I-V characteristic is enhanced with respect to ``full'' shot noise. We provide experimental results showing a Fano factor up…

强关联电子 · 物理学 2009-10-30 G. Iannaccone , G. Lombardi , M. Macucci , B. Pellegrini

We present the results of the experimental investigation of the low - frequency noise in bilayer graphene transistors. The back - gated devices were fabricated using the electron beam lithography and evaporation. The charge neutrality point…

材料科学 · 物理学 2009-11-13 Q. Shao , G. Liu , D. Teweldebrhan , A. A. Balandin , S. Roumyantesv , M. Shur , D. Yan

Fluctuations of electric current in a spin valve consisting of a diffusive conductor connected to ferromagnetic leads and operated in the giant magnetoresistance regime are studied. It is shown that a new source of fluctuations due to…

介观与纳米尺度物理 · 物理学 2007-05-23 E. G. Mishchenko

Heat has always been a killing matter for traditional semiconductor machines. The underlining physical reason is that the intrinsic carrier density of a device made from a traditional semiconductor material increases very fast with a rising…

材料科学 · 物理学 2016-04-21 Yan Yin , Zengguang Cheng , Li Wang , Kuijuan Jin , Wenzhong Wang

We analyze the full transport statistics of graphene with smooth disorder at low dopings. First we consider the case of 1D disorder for which the transmission probability distribution is given analytically in terms of the graphene-specific…

介观与纳米尺度物理 · 物理学 2011-11-10 P. San-Jose , E. Prada , D. S. Golubev

We fabricated a large number of single and bilayer graphene transistors and carried out a systematic experimental study of their low-frequency noise characteristics. A special attention was given to determining the dominant noise sources in…

材料科学 · 物理学 2015-05-19 S. Rumyantsev , G. Liu , W. Stillman , M. Shur , A. A. Balandin

We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunneling junctions with a high tunneling magnetoresistance ratio (over 200% at 3 K). Although the Fano factor in the anti-parallel configuration is close to unity, it is…

Inelastic phonon scattering in graphene field-effect transistors (FETs) is studied by numerically solving the Boltzmann transport equation in three dimensional real and phase spaces (x, kx, ky). A kink behavior due to ambipolar transport…

介观与纳米尺度物理 · 物理学 2015-05-27 Jyotsna Chauhan , Jing Guo

Fano noise, readout noise, and the partial charge collection (PCC) effect collectively contribute to the degradation of energy spectra in Charge Coupled Devices (CCD) measurements, especially at low energies. In this work, the X-ray…

Owing to a linear and gapless band structure and a tunability of the charge carrier type, graphene offers a unique system to investigate transport of Dirac Fermions at p-n junctions (PNJs). In a magnetic field, combination of quantum Hall…

介观与纳米尺度物理 · 物理学 2016-04-20 N. Kumada , F. D. Parmentier , H. Hibino , D. C. Glattli , P. Roulleau

The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene-metal interface or the contact noise, on the performance of graphene field effect transistors, can be as adverse as the contact resistance…

介观与纳米尺度物理 · 物理学 2017-02-02 Paritosh Karnatak , T. Phanindra Sai , Srijit Goswami , Subhamoy Ghatak , Sanjeev Kaushal , Arindam Ghosh

We investigate the behavior of the shot-noise power through quantum mechanical cavities in the semiclassical limit of small electronic wavelength. In the absence of impurity scattering, the Fano factor $F$, giving the noise to current…

介观与纳米尺度物理 · 物理学 2009-11-11 Philippe Jacquod , Robert S. Whitney

We develop a theory for the temperature and density dependence of phonon-limited resistivity $\rho(T)$ in bilayer and multilayer graphene, and compare with the corresponding monolayer result. For the unscreened case, we find $\rho \approx C…

材料科学 · 物理学 2011-04-20 Hongki Min , E. H. Hwang , S. Das Sarma

We have investigated the low-frequency 1/f noise of both suspended and on-substrate graphene field-effect transistors and its dependence on gate voltage, in the temperature range between 300K and 30K. We have found that the noise amplitude…

材料科学 · 物理学 2012-04-09 Yan Zhang , E. E. Mendez , Xu Du

In this paper we report a relaxation-induced suppression of the noise for a single level quantum dot coupled to an oscillator with incoherent dynamics in the sequential tunneling regime. It is shown that relaxation induces qualitative…

介观与纳米尺度物理 · 物理学 2007-05-23 F. Haupt , F. Cavaliere , R. Fazio , M. Sassetti

Using the random matrix approach, we calculate analytically the average shot-noise power in a chaotic cavity at an arbitrary number of propagating modes (channels) in each of the two attached leads. A simple relationship between this…

介观与纳米尺度物理 · 物理学 2007-05-23 D. V. Savin , H. -J. Sommers

We study sequential tunneling through a metallic nanoparticle close to the Stoner instability coupled to parallely magnetized electrodes. Increasing the bias voltage successively opens transport channels associated with excitations of the…

介观与纳米尺度物理 · 物理学 2012-04-20 Björn Sothmann , Jürgen König , Yuval Gefen

We extend the theory of shot noise in coherent metals to shot noise in strange metals without quasiparticle excitations. This requires a generalization of the Boltzmann equation with a noise source to distribution functions which depend…

强关联电子 · 物理学 2023-11-17 Alexander Nikolaenko , Subir Sachdev , Aavishkar A. Patel

The frequency exponent of 1/f noise in graphene-boron nitride heterostructures is known to have multiple extrema in its dependence on the charge carrier concentration. This behavior is explained in the present paper as a result of the…

介观与纳米尺度物理 · 物理学 2025-08-27 K. A. Kazakov , T. M. Valitov