相关论文: Shot Noise in Graphene

We report measurements of the bias dependence of the Fano factor in ensembles of atomic-scale Au junctions at 77 K. Previous measurements of shot noise at room temperature and low biases have found good agreement of the Fano factor with the…

The shot noise suppression in a sample containing a layer of self-assembled InAs quantum dots has been investigated experimentally and theoretically. The observation of a non-monotonic dependence of the Fano factor on the bias voltage in a…

Shot-noise measures the correlations of fluctuations of current for a voltage applied much larger than the temperature and reveals aspects of correlations in fermions beyond those revealed in the conductivity. Recent measurements of…

We investigate shot noise at {\it finite temperatures} induced by the quasi-particle tunneling between fractional quantum Hall (FQH) edge states. The resulting Fano factor has the peak structure at a certain bias voltage. Such a structure…

We study a model of two interacting levels that are attached to two electronic leads, where one of the levels is attached very weakly to the leads. We use rate equations method to calculate the average current and the noise of electrons…

We review calculations and measurements of the phonon-dispersion relation of graphite. First-principles calculations using density-functional theory are generally in good agreement with the experimental data since the long-range character…

Taking into account the constraints imposed by the lattice symmetry, the phonon dispersion is calculated for graphene with interactions between the first and second nearest neighbors in the framework of the Born-von Karman model. Analytical…

We report the results of an analysis, based on a straightforward quantum-mechanical model, of shot noise suppression in a structure containing cascaded tunneling barriers. Our results exhibit a behavior that is in sharp contrast with…

We investigate the noise properties of a GaAs/AlGaAs resonant tunneling structure at bias voltages where the current characteristic is determined by single electron tunneling. We discuss the suppression of the shot noise in the framework of…

The nature of the low-frequency current fluctuations, i.e. carrier number vs. mobility, defines the strategies for noise reduction in electronic devices. While the 1/f noise in metals has been attributed to the electron mobility…

We show that the breakdown of the Wiedemann-Franz law due to electron--electron scattering in diffusive spin valves may result in a strong suppression of the Fano factor that describes the ratio between shot noise and average current. In…

We investigate the noise in single layer graphene devices from equilibrium to far from equilibrium and found that the 1/f noise shows an anomalous dependence on the source-drain bias voltage (VSD). While the Hooge relation is not the case…

We measured the conductance fluctuation of bi- and trilayer graphene devices prepared on mechanical exfoliated graphene by an all-dry, lithography-free process using an ultrathin quartz filament as a shadow mask. Reproducible fluctuations…

We have used Monte Carlo simulation to calculate the shot noise intensity $S_I(\omega)$ at 2D hopping using two models: a slanted lattice of localized sites with equal energies and a set of localized sites with random positions and…

We predict shot noise enhancement in defect-free carbon nanotube field-effect transistors through a numerical investigation based on the self-consistent solution of the Poisson and Schrodinger equations within the non-equilibrium Green…

We have observed suppression of shot noise in the variable-range hopping regime for a two-dimensional electron gas whose localization length, xi, is controlled by a gate voltage. We have found that the suppression factor F (Fano factor) is…

The progress in nanofabrication, measurement technology, and mesoscopic transport theory has been expanding the field of shot noise. Although a wave-packet approach to DC shot noise of independent electrons at finite temperature was offered…

In this letter we present the results of systematic experimental investigations of the effect of different chemical environments on the low frequency resistance fluctuations of single layer graphene field effect transistors (SLG-FET). The…

Random fluctuations of the shot-noise power in disordered graphene nanoribbons are studied. In particular, we calculate the distribution of the shot noise of nanoribbons with zigzag and armchair edge terminations. We show that the shot…

We study shot noise and cross correlations in a four terminal spin-valve geometry using a Boltzmann-Langevin approach. The Fano factor (shot noise to current ratio) depends on the magnetic configuration of the leads and the spin-flip…