相关论文: Shot Noise in Graphene

We show that vapors of different chemicals produce distinguishably different effects on the low-frequency noise spectra of graphene. It was found in a systematic study that some gases change the electrical resistance of graphene devices…

Shot noise is a powerful tool to probe correlations and microscopic transport details that conductance measurements alone cannot reveal. Even in atomic-scale Au devices that are well described by Landauer-B{\"u}ttiker physics, complications…

We have derived a general formula describing current noise in multimode ballistic channels connecting source and drain electrodes with Fermi electron gas. In particular (at $eV\gg k_{B}T$), the expression describes the nonequilibrium…

The shot noise of spin polarized electrons is shown to be generically dependent upon spin-flip processes. Such a situation represents perhaps the simplest instance where the two-particle character of current fluctuations out of equilibrium…

We observe mechanical effects of an exfoliated graphene monolayer deposited on a quartz crystal substrate designed to operate as an extremely low-loss bulk-acoustic-wave cavity at liquid-helium temperature.This is achieved by sensing…

This letter investigates the bias-dependent low frequency noise of single layer graphene field-effect transistors. Noise measurements have been conducted with electrolyte-gated graphene transistors covering a wide range of gate and drain…

Low-frequency noise (LFN) variability in graphene transistors (GFETs) is for the first time researched in this work. LFN from an adequate statistical sample of long-channel solution-gated single-layer GFETs is measured in a wide range of…

Fano resonances and their strong doping dependence are observed in Raman scattering of single-layer graphene (SLG). As the Fermi level is varied by a back-gate bias, the Raman G band of SLG exhibits an asymmetric line shape near the charge…

A semiclassical theory of the low frequency shot noise in ferromagnet - normal metal systems is formulated. Non-collinear magnetization directions of the ferromagnetic leads, arbitrary junctions and the elastic and inelastic scattering…

Scattering mechanisms in graphene are critical to understanding the limits of signal-to-noise-ratios of unsuspended graphene devices. Here we present the four-probe low frequency noise (1/f) characteristics in back-gated single layer…

We have investigated low-frequency 1/f noise in the boron nitride - grapheme - boron nitride heterostructure field - effect transistors on Si/SiO2 substrates (f is a frequency). The device channel was implemented with a single layer…

We study the influence of inelastic processes on shot noise and the Fano factor for a one-dimensional double-barrier structure, where resonant tunneling takes place between two terminals. Most studies to date have found, by means of various…

We have investigated the low frequency (f) flicker (also called 1/f) noise of single-layer graphene devices on h-BN (placed on SiO2/Si) along with those on SiO2/Si. We observe that the devices fabricated on h-BN have on average one order of…

The enormous stiffness and low density of graphene make it an ideal material for nanoelectromechanical (NEMS) applications. We demonstrate fabrication and electrical readout of monolayer graphene resonators, and test their response to…

We theoretically calculate the charge-supercurrent through a ballistic graphene junction where superconductivity is induced via the proximity-effect. Both monolayer and bilayer graphene are considered, including the possibility of strain in…

We have studied the Fano resonance in photon-assisted transport in a quantum dot and calculated both the coherent current and spectral density of shot noise. It is predicted, for the first time, that the shape of Fano profile will also…

We generalize the scattering theory of quantum shot noise to include the full spin-density matrix of electrons injected from a spin-filtering or ferromagnetic electrode into a quantum-coherent nanostructure governed by various…

We theoretically compared quantum noise squeezing differences between silicon and graphene nanoresonators based on experimental structure parameters. The conditions to achieve squeezed states of silicon and graphene have been discussed.…

We report a detailed investigation of low-frequency resistance fluctuations (1/f noise) in chemical vapor deposition (CVD) grown graphene. Systematic measurements reveal that the magnitude of 1/f noise in CVD-grown graphene is significantly…

Shot noise measurements in quantum point contacts are a powerful tool to investigate charge transport in the integer and fractional quantum Hall regime, in particular to unveil the charge, quantum statistics and tunneling dynamics of edge…