相关论文: Intervalley splittings of Si quantum wells

Electrical transport in double quantum dots (DQDs) illuminates many interesting features of the dots' carrier states. Recent advances in silicon quantum information technologies have renewed interest in the valley states of electrons…

Valley splitting is a key figure of silicon-based spin qubits. Quantum dots in Si/SiGe heterostructures reportedly suffer from a relatively low valley splitting, limiting the operation temperature and the scalability of such qubit devices.…

Using dynamical-mean-field theory, we investigate the electronic properties of quantum wells consisting of a $t^1_{2g}$-electron system with strong correlations. The special focus is on the subband structure of such quantum wells. The…

The electronic structure for a strained Si/SiGe quantum well grown on a tilted substrate with periodic steps is calculated using a parameterized tight-binding method. For a zero tilt angle the energy difference between the two lowest minima…

Quantum particle bound in an infinite, one-dimensional square potential well is one of the problems in Quantum Mechanics (QM) that most of the textbooks start from. There, calculating an allowed energy spectrum for an arbitrary wave…

We modeled the electron and hole states in Si/SiO2 quantum wells within a basis of standing waves using the 30-band k.p theory. The hard-wall confinement potential is assumed, and the influence of the peculiar band structure of bulk silicon…

We address static and dynamical properties of one-dimensional (1D) quantum droplets (QDs) under the action of local potentials in the form of narrow wells and barriers. The QDs are governed by the 1D Gross-Pitaevskii equation including the…

A computationally efficient, self-consistent complex scaling approach to calculating characteristics of excitons in an external electric field in quantum wells is introduced. The method allows one to extract the resonance position as well…

A spin interaction Hamiltonian for topological basis is constructed in this paper. When we select proper parameters, this Hamiltonian system can be simulated by a quantum double well potential system. If the parameter $\Delta=0$, the…

In this paper I briefly review recent theoretical results derived within the Finkel'stein nonlinear sigma model approach for description of 2D interacting disordered electron systems. The examples include an electron system with two…

Studies of different experimental groups that explore the properties of a two-dimensional electron gas in silicon semiconductor systems ((100) Si metal-oxide-semiconductor field-effect transistors (MOSFETs) and (100) SiGe/Si/SiGe quantum…

Lifting the valley degeneracy is an efficient way to achieve valley polarization for further valleytronics operations. In this work, we demonstrate that a large valley splitting can be obtained in monolayer transition metal dichalcogenides…

We study the spin-valley Kondo effect of a silicon quantum dot occupied by $% \mathcal{N}$ electrons, with $\mathcal{N}$ up to four. We show that the Kondo resonance appears in the $\mathcal{N}=1,2,3$ Coulomb blockade regimes, but not in…

Although silicon is a promising material for quantum computation, the degeneracy of the conduction band minima (valleys) must be lifted with a splitting sufficient to ensure formation of well-defined and long-lived spin qubits. Here we…

2D materials with valley-related multiple Hall effect are both fundamentally intriguing and practically appealing to explore novel phenomena and applications, but have been largely overlooked up to date. Here, using first-principles…

We investigate the effect of the valley degree of freedom on Pauli-spin blockade readout of spin qubits in silicon. The valley splitting energy sets the singlet-triplet splitting and thereby constrains the detuning range. The valley phase…

A simulation methodology for ultra-scaled InAs quantum well field effect transistors (QWFETs) is presented and used to provide design guidelines and a path to improve device performance. A multiscale modeling approach is adopted, where…

We report measurements consistent with the valley Kondo effect in Si/SiGe quantum dots, evidenced by peaks in the conductance versus source-drain voltage that show strong temperature dependence. The Kondo peaks show unusual behavior in a…

We calculate the phase diagram of the two component fractional quantum Hall effect as a function of the spin or valley Zeeman energy and the filling factor, which reveals new phase transitions and phase boundaries spanning many fractional…

The results of tunnelling studies of the energy spectrum of two-dimensional (2D) states in a surface quantum well in a semiconductor with inverted band structure are presented. The energy dependence of quasimomentum of the 2D states over a…