相关论文: Intervalley splittings of Si quantum wells

A scattering mechanism stemming from the Stark-shift of energy levels by electric fields in semiconductor quantum wells is identified. This scattering mechanism feeds off interface roughness and electric fields, and modifies the well known…

We use an one dimensional model of a square barrier embedded in an infinite potential well to demonstrate that tunneling leads to a complex behavior of the wave function and that the degree of complexity may be quantified by use of the…

We have studied the behavior of the electronic energy spin-splitting of InGaAs-InAlAs based double quantum wells (narrow gap structures) under in-plane magnetic and transverse electric fields. We have developed an improved 8x8 version of…

Spin qubits composed of either one or three electrons are realized in a quantum dot formed at a Si/SiO_2-interface in isotopically enriched silicon. Using pulsed electron spin resonance, we perform coherent control of both types of qubits,…

The accuracy of the WKB approximation when predicting the energy splitting of bound states in a double well potential is the main subject of this paper. The splitting of almost degenerate energy levels below the top of the barrier results…

The valley structure associated with quantum meta-stability is examined. It is defined by the new valley equation, which enables consistent evaluation of the imaginary-time path-integral. We study the structure of this new valley equation…

We show that once the effects of valley splitting and intervalley scattering are incorporated, renormalization group theory consistently describes the metallic phase in silicon metal-oxide-semiconductor field-effect transistors down to the…

Silicon quantum chips offer a promising path toward scalable, fault-tolerant quantum computing, with the potential to host millions of qubits. However, scaling up dense quantum-dot arrays and enabling qubit interconnections through…

We derive a semiclassical formula for the tunneling current of electrons trapped in a potential well which can tunnel into and across a wide quantum well. The calculations idealize an experimental situation where a strong magnetic field…

The exciton-exciton interaction is investigated for quasi-two-dimensional quantum structures. A bosonization scheme is applied including the full spin structure. For generating the effective interaction potentials, the Hartree-Fock and…

The energy spectrum and wave functions of electrons in a single silicon quantum dot provide valuable insights into the capabilities and limitations of such a system in quantum information processing. Here we investigate the low-lying…

The level splitting formulae much discussed in the study of spin tunneling in macroscopic ferromagnetic particles and previously derived only by complicated pseudoparticle methods for the ground state, are derived from those of eigenvalues…

In this paper the possibility to bring about the double- valley Dirac fermions in some quantum structures is predicted. These quantum structures are: strained 3D Hg$_{1-x}$Cd$_x$Te topological insulator (TI) with strong interface inversion…

We unravel the existence and nonequilibrium response of one-dimensional harmonically trapped droplet configurations in the presence of a central potential barrier or well. For fixed negative chemical potentials, it is shown that droplets…

We report here a systematic study of the energy gaps at the odd-integer quantum Hall states $\nu=3$ and 5 under tilted magnetic (B) fields in a high quality Si two-dimensional electron system. Out of the coincidence region, the valley…

We show that the efficiency of manipulating electron spin in semiconductor quantum wells can be enhanced by tuning the strain strength. The effect combining intrinsic and strain-induced spin splitting varies for different systems, which…

The solution to a problem in quantum mechanics is generally a linear superposition of states. The solutions for double well potentials epitomize this property, and go even further than this: they can often be described by an effective model…

This article examines the suggestion made in Ref. [EPL, 115 (2016) 60001] that a solution to a particle in an infinite spherical well model, if it is square-integrable, is a physically valid solution, even if at the precise location of the…

Scattering processes by the interface roughness in a quantum well in a quantizing magnetic field are considered. An expression for the scattering rate is derived for a magnetic field tilted relative to the quantum well layers. By analyzing…

Despite many reports of valley-related phenomena in graphene and its multilayers, current transport experiments cannot probe valley phenomena without the application of external fields. Here we propose a gate-defined valley splitter as a…