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Pressure dependence of the conductivity and thermoelectric power is measured through the Mott transition in the layer organic conductor EtMe3P[Pd(dmit)2]2. The critical behavior of the thermoelectric effect provides a clear and objective…

强关联电子 · 物理学 2015-03-17 M. Abdel-Jawad , R. Kato , I. Watanabe , N. Tajima , Y. Ishii

We report conductivity measurements of Cr-doped V2O3 using a variable pressure technique. The critical behavior of the conductivity near the Mott-insulator to metal critical endpoint is investigated in detail as a function of pressure and…

强关联电子 · 物理学 2009-11-10 P. Limelette , A. Georges , D. Jerome , P. Wzietek , P. Metcalf , J. M. Honig

We study three regimes of the Mott transitions characterized by classical, marginally quantum and quantum. In the classical regime, the quantum degeneracy temperature is lower than the critical temperature of the Mott transition, Tc, below…

强关联电子 · 物理学 2007-05-23 Masatoshi Imada

Order parameter fluctuations for the two dimensional Ising model in the region of the critical temperature are presented. A locus of temperatures T*(L) and of magnetic fields B*(L) are identified, for which the probability density function…

统计力学 · 物理学 2009-11-10 Maxime Clusel , Jean-Yves Fortin , Peter C. W. Holdsworth

Phenomenological theory of the Mott transition is presented. When the critical temperature of the Mott transition is much higher than the quantum degeneracy temperature, the transition is essentially described by the Ising universality…

强关联电子 · 物理学 2007-05-23 Masatoshi Imada

We demonstrate that the Mott transition exhibits universal scaling as a consequence of the breaking of a $\mathbb{Z}_2$ symmetry in momentum space. A direct consequence of this discrete symmetry breaking is the charge or Mott gap itself.…

强关联电子 · 物理学 2025-11-25 Jinchao Zhao , Peizhi Mai , Gaurav Tenkila , Philip W. Phillips

We study the second order finite temperature Mott transition point in the fully frustrated Hubbard model at half filling, within Dynamical Mean Field Theory. Using quantum Monte Carlo simulations we show the existence of a finite…

强关联电子 · 物理学 2009-10-31 Marcelo J. Rozenberg , R. Chitra , G. Kotliar

The gas-liquid transition is a first-order transition terminating at a finite-temperature critical point with diverging density fluctuations. Mott transition, a metal-insulator transition driven by Coulomb repulsion between electrons, has…

超导电性 · 物理学 2007-05-23 Masatoshi Imada

Changing the interactions between particles in an ensemble-by varying the temperature or pressure, for example-can lead to phase transitions whose critical behaviour depends on the collective nature of the many-body system. Despite the…

强关联电子 · 物理学 2009-11-11 F. Kagawa , K. Miyagawa , K. Kanoda

We discuss a scaling theory of the lattice response in the vicinity of a finite-temperature critical end point. The thermal expansivity is shown to be more singular than the specific heat such that the Gr\"uneisen ratio diverges as the…

强关联电子 · 物理学 2010-06-16 Lorenz Bartosch , Mariano de Souza , Michael Lang

We study the behaviour of a universal combination of susceptibility and correlation length in the Ising model in two and three dimensions, in presence of both magnetic and thermal perturbations, in the neighbourhood of the critical point.…

高能物理 - 格点 · 物理学 2020-07-13 Michele Caselle , Marianna Sorba

The interaction-induced metal-insulator transition should be in the Ising universality class. Experiments on layered organic superconductors suggest that the observed critical endpoint of the first-order Mott transition belongs instead to a…

强关联电子 · 物理学 2012-06-19 Patrick Sémon , A. -M. S. Tremblay

We study the thermodynamics near the generic (density-driven) superfluid--Mott-insulator transition in the three-dimensional Bose-Hubbard model using the nonperturbative renormalization-group approach. At low energy the physics is…

量子气体 · 物理学 2012-11-28 A. Rancon , N. Dupuis

For the first order transition of the Ising model below $T_c$, Isakov has proven that the free energy possesses an essential singularity in the applied field. Such a singularity in the control parameter, anticipated by condensation theory,…

统计力学 · 物理学 2011-10-11 J. L. Meunier , A. Morel

We introduce a universal combination of susceptibility and correlation length in the 3D Ising model, depending both on temperature and external magnetic field. Starting from a parametric representation of the equation of state, we study its…

高能物理 - 格点 · 物理学 2021-11-29 Michele Caselle , Marianna Sorba

We use the two-step density-matrix renormalization group method to elucidate the long-standing issue of the universality class of the Mott transition in the Hubbard model in two dimensions. We studied a spatially anisotropic two-dimensional…

强关联电子 · 物理学 2015-06-05 S. Moukouri , Eitan Eidelstein

We perform large-scale computer simulations of an off-lattice two-dimensional model of active particles undergoing a motility-induced phase separation (MIPS) to investigate the systems critical behaviour close to the critical point of the…

统计力学 · 物理学 2022-10-21 Claudio Maggi , Matteo Paoluzzi , Andrea Crisanti , Emanuela Zaccarelli , Nicoletta Gnan

We study electric transport near the Mott metal-insulator transition in a triangular-lattice Hubbard model at half filling. We calculate optical conductivity $\sigma(\omega)$ based on a cellular dynamical mean field theory including vertex…

强关联电子 · 物理学 2015-06-12 Toshihiro Sato , Kazumasa Hattori , Hirokazu Tsunetsugu

Metallic states near the Mott insulator show a variety of quantum phases including various magnetic, charge ordered states and high-temperature superconductivity in various transition metal oxides and organic solids. The emergence of a…

强关联电子 · 物理学 2023-12-05 Kensaku Takai , Youhei Yamaji , Fakher F. Assaad , Masatoshi Imada

We show that the dilute Fermi gas quantum critical universality class quantitatively describes the Mott/metal crossover of the two-dimensional Hubbard model for temperatures somewhat less than (roughly half) the tunneling but much greater…

强关联电子 · 物理学 2013-05-14 Kaden R. A. Hazzard , Ana Maria Rey , Richard T. Scalettar
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