相关论文: Electrical expression of spin accumulation in ferr…
The spin-dependent transport of the electrons tunneling through a resonant tunneling structure with ferromagnetic multi-terminal under dc and ac fields is explored by means of the nonequilibrium Green function technique. A general…
We study the possibility of spin injection from Fe into Si(001), using the Schottky barrier at the Fe/Si contact as tunneling barrier. Our calculations are based on density-functional theory for the description of the electronic structure…
Spontaneous spin polarization of the electrical current flowing through nonmagnetic semiconductor junctions can be generated by carrier scattering processes that are independent of the carrier spin. The two required elements for…
We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe_3Si/Si Schottky-tunnel-barrier contacts. By an insertion of a delta-doped n^+-Si layer (~ 10^19 cm^-3) near the…
The effect of spin-disorder scattering on perpendicular transport in a magnetic monolayer is considered within the single-site Coherent Potential Approximation (CPA). The exchange interaction between a conduction electron and localized…
Current fluctuations can provide additional insight into quantum transport in mesoscopic systems. The present work is carried out for the fluctuation properties of transport through a pair of coupled quantum dots which are connected with…
Based on the Keldysh formalism, the Boltzmann kinetic equation and the drift diffusion equation have been derived for studying spin polarization flow and spin accumulation under effect of the time dependent Rashba spin-orbit interaction in…
Within the scheme of quantum rate equations, we investigate the spin-resolved transport through a double quantum dot system with four ferromagnetic terminals. It is found that the injection efficiency of spin-polarized electrons can be…
Selected problems of fundamental importance for spintronics and spin-polarized transport are reviewed, some of them with a special emphasis on their applications in quantum computing and coherent control of quantum dynamics. The role of the…
We present a study of spin transport in charge and spin inhomogeneous semiconductor systems. In particular, we investigate the propagation of spin-polarized electrons through a boundary between two semiconductor regions with different…
Scattering theory is employed to derive a Landauer-type formula for the spin and the charge currents, through a finite region where spin-orbit interactions are effective. It is shown that the transmission matrix yields the spatial direction…
By viewing current in the detecting lead of a spintronic device as being an ensemble of flowing spins corresponding to a mixed quantum state, where each spin itself is generally described by an improper mixture generated during the…
We study theoretically the spin transport in a nonmagnetic metal connected to ferromagnetic injector and detector electrodes. We derive a general expression for the spin accumulation signal which covers from the metallic to the tunneling…
We present generalized scattering theory for multi-terminal spin transport in systems with broken SU(2) symmetry either due to spin-orbit interaction,magnetic impurities or magnetic leads. We derive equation for spin current consistent with…
Spin-dependent transport is investigated in ballistic regime through the interface between a ferromagnet and a spin spiral. We show that spin-dependent interferences lead to a new type of diffraction called "spin-diffraction". It is shown…
Scheme and principle of operation of a spin gain transistor are proposed: a large unmagnetized current creates density sufficient for the ferromagnetic transition; a small magnetized current initiates spontaneous magnetization; large…
We report on spin injection experiments at a Co/Al$_2$O$_3$/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $\Delta V$ at the interface as high as 1.2mV for a current…
The recently observed Seebeck spin tunneling, the thermoelectric analog of spin-polarized tunneling, is described. The fundamental origin is the spin dependence of the Seebeck coefficient of a tunnel junction with at least one ferromagnetic…
The polarization of conduction electron spins due to an electrical current is observed in strained nonmagnetic semiconductors using static and time-resolved Faraday rotation. The density, lifetime, and orientation rate of the…
An impressive success of spintronic applications has been typically realized in metal-based structures which utilize magnetoresistive effects for substantial improvements in the performance of computer hard drives and magnetic random access…