相关论文: Electrical expression of spin accumulation in ferr…

We propose a scheme where transport measurements of charge current and its noise can be used to determine the spin Hall conductance in a four-terminal setup. Starting from the scattering formalism we express the spin current and spin Hall…

We formulate a theory of spin dependent transport of an electronic circuit involving ferromagnetic elements with non-collinear magnetizations which is based on the conservation of spin and charge current. The theory considerably simplifies…

Spin transport properties at finite electric and magnetic fields are studied by using the generalized semiclassical Boltzmann equation. It is found that the spin diffusion equation for non-equilibrium spin density and spin currents involves…

We propose a model to explore the dynamics of spin-systems coupled by exchange interaction to the conduction band electrons of a semiconductor material that forms the channel in a ferromagnet/semiconductor/ferromagnet spin-valve structure.…

A theory of spin-polarized electron transport in ferromagnet/semiconductor heterostructures, based on a unified semiclassical description of ballistic and diffusive transport in semiconductor structures, is developed. The aim is to provide…

We present a theory of the imprinting of the electron spin coherence and population in an n-doped semiconductor which forms a junction with a ferromagnet. The reflection of non-equilibrium semiconductor electrons at the interface provides a…

A theory of spin-transport in hybrid normal metal - ferromagnetic electronic circuits is developed, taking into account non-collinear spin-accumulation. Spin-transport through resistive elements is described by 4 conductance parameters.…

Efficient conversion of a spin signal into an electric voltage in mainstream semiconductors is one of the grand challenges of spintronics. This process is commonly achieved via a ferromagnetic tunnel barrier where non-linear electric…

Theory of the ac spin injection from a ferromagnetic electrode into a normal conductor through a tunnel or Schottky contact is developed. Diffusion and relaxation of non-equilibrium spins results in a frequency dependent complex impedance…

Injecting spins into a semiconductor channel and transforming the spin information into a significant electrical output signal is a long standing problem in spintronics. Actually, this is the prerequisite of several concepts of spin…

Spin polarization of the tunnel conductivity has been studied for Fe/GaAs junctions with Schottky barriers. It is shown that band matching of resonant interface states within the Schottky barrier defines the sign of spin polarization of…

The spin and charge transport in materials with spin-dependent conductivity has been studied. It was shown that there is a charge accumulation along spin diffusion in a ferromagnetic metal, which causes a shortening of the spin diffusion…

We formulate a theory of current-induced spin torques in inhomogeneous III-V ferromagnetic semiconductors. The carrier spin-3/2 and large spin-orbit interaction, leading to spin non-conservation, introduce significant conceptual differences…

We study spin transport in forward and reverse biased junctions between a ferromagnetic metal and a degenerate semiconductor with a delta-doped layer near the interface at relatively low temperatures. We show that spin polarization of…

We consider electron transport in ferromagnets or antiferromagnets sandwiched between metals. When spins in the magnetic materials precess, they emit currents into the surrounding conductors. Generally, adiabatic pumping in mesoscopic…

We apply an analysis of time-dependent spin-polarized current in a semiconductor channel at room temperature to establish how the magnetization configuration and dynamics of three ferromagnetic terminals, two of them biased and third…

Spin Hall effects are a collection of phenomena, resulting from spin-orbit coupling, in which an electrical current flowing through a sample can lead to spin transport in a perpendicular direction and spin accumulation at lateral…

Boundary conditions are derived that determine the penetration of spin current through an interface of two non-collinear ferromagnets with an arbitrary angle between their magnetization vectors. We start from the well-known transformation…

We consider electron tunneling from a nonmagnetic $n$-type semiconductor ($n$-S) into a ferromagnet (FM) through a very thin forward-biased Schottky barrier resulting in efficient extraction of electron spin from a thin $n$-S layer near…

We propose a spin-dependent resonant tunneling structure to efficiently inject spin-polarized current into silicon (Si). By means of a heavily doped polycrystalline Si (Poly-Si) between the ferromagnetic metal (FM) and Si to reduce the…