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相关论文: Electrical expression of spin accumulation in ferr…

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A theory of the proximity effects of the exchange splitting in a ferromagnetic metal on a two dimensional electron gas (2DEG) in a semiconductor is presented. The resulting spin-dependent energy and lifetime in the 2DEG create a marked…

介观与纳米尺度物理 · 物理学 2009-11-10 J. P. McGuire , C. Ciuti , L. J. Sham

The helicity of a circularly polarized light beam may be determined by the spin direction of photo-excited electrons in a III-V semiconductor. We present a theoretical demonstration how the direction of the ensuing electron spin…

介观与纳米尺度物理 · 物理学 2009-11-11 H. Dery , L. Cywinski , L. J. Sham

In this work we demonstrate explicit analytical expressions for both charge and spin currents which constitute the 2x2 spinor in magnetic tunnel junctions with noncollinear magnetizations under applied voltage. The calculations have been…

介观与纳米尺度物理 · 物理学 2015-09-23 M. Chshiev , A. Manchon , A. Kalitsov , N. Ryzhanova , A. Vedyayev , N. Strelkov , W. H. Butler , B. Dieny

We study theoretically extraction of spin-polarized electrons at nonmagnetic semiconductor/ferromagnet junctions. The outflow of majority spin electrons from the semiconductor into the ferromagnet leaves a cloud of minority spin electrons…

介观与纳米尺度物理 · 物理学 2007-06-13 Yu. V. Pershin , M. Di Ventra

We construct a novel scattering theory to investigate magnetoelectrically induced spin polarizations. Local spin polarizations generated by electric currents passing through a spin-orbit coupled mesoscopic system are measured by an external…

介观与纳米尺度物理 · 物理学 2015-05-14 Ph. Jacquod

We consider spin accumulation at a ferromagnet--normal metal interface in the presence of magnetic scattering in the normal metal. In the classical regime, we discuss the inverse Drude scaling of the conductance as a function of the…

介观与纳米尺度物理 · 物理学 2009-10-31 R. Mélin , D. Denaro

We present a self-consistent method for the evaluation of the electronic current flowing through a multi-terminal molecular wire. The method is based on Buttiker- Landauer theory which relates the current to one-electron scattering…

介观与纳米尺度物理 · 物理学 2009-10-31 Eldon G. Emberly , George Kirczenow

The description of electron current through a splitting is a mathematical problem of electron transport in quantum networks. For quantum networks constructed on the interface of narrow-gap semiconductors the relevant scattering problem for…

数学物理 · 物理学 2007-05-23 M. Harmer , A. Mikhailova , B. S. Pavlov

We derive a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics. We identify a high-field diffusive regime which has no analogue…

材料科学 · 物理学 2009-11-07 Z. G. Yu , M. E. Flatte

We discuss a simple, semiclassical scattering theory for spin-dependent transport in a many-terminal formulation, with special attention to the four terminal device of Johnson referred to as spin transistor

介观与纳米尺度物理 · 物理学 2007-05-23 Linda S. Geux , Arne Brataas , Gerrit E. W. Bauer

The recently suggested mechanism [Y. Song and H. Dery, Phys. Rev. Lett. 113, 047205 (2014)] of the three-terminal spin transport is based on the resonant tunneling of electrons between ferromagnetic and normal electrodes via an impurity.…

介观与纳米尺度物理 · 物理学 2016-02-05 Z. Yue , M. E. Raikh

We describe theoretically the process of multi-beam reflection in a two-dimensional electron system with a lateral potential barrier. Due to spin-orbital interaction, the reflection process leads to the formation of three beams with…

介观与纳米尺度物理 · 物理学 2009-11-10 A. O. Govorov , A. V. Kalameitsev , J. P. Dulka

We find extraordinary behavior of the local two-terminal spin accumulation signals in ferromagnet (FM)/semiconductor (SC) lateral spin-valve devices. With respect to the bias voltage applied between two FM/SC Schottky tunnel contacts, the…

介观与纳米尺度物理 · 物理学 2019-08-16 Y. Fujita , M. Yamada , M. Tsukahara , T. Naito , S. Yamada , S. Oki , K. Sawano , K. Hamaya

We demonstrate theoretically that spin dynamics of electrons injected into a GaAs semiconductor structure through a Schottky barrier possesses strong non-equilibrium features. Electrons injected are redistributed quickly among several…

介观与纳米尺度物理 · 物理学 2007-05-23 Semion Saikin , Min Shen , Ming-Cheng Cheng

We show that spin polarization of electrons in nonmagnetic semiconductors near specially tailored ferromagnet-semiconductor junctions can achieve 100%. This effect is realized even at moderate spin injection coefficients of the contact when…

其他凝聚态物理 · 物理学 2007-05-23 V. V. Osipov , V. N. Smelyanskiy , A. G. Petukhov

The high efficiency of a tunnel magnetic transistor as a source of spin-polarized electrons has been proven recently [X. Jiang {\it et al.}, Phys. Rev. Lett. {\bf 90}, 256603 (2003)]. A concept of this device based on an active group of hot…

介观与纳米尺度物理 · 物理学 2007-05-23 Emmanuel I. Rashba

A new way of getting controlled spin dependent transport through a two-terminal bridge setup is explored. The system comprises a magnetic quantum ring which is directly coupled to a magnetic quantum wire and subjected to an in-plane…

介观与纳米尺度物理 · 物理学 2015-07-09 Santanu K. Maiti

Spin transport at metallic interfaces is an essential ingredient of various spintronic device concepts, such as giant magnetoresistance, spin-transfer torque, and spin pumping. Spin-orbit coupling plays an important role in many such…

介观与纳米尺度物理 · 物理学 2020-07-01 G. G. Baez Flores , Alexey A. Kovalev , M. van Schilfgaarde , K. D. Belashchenko

We develop a detailed theory for spin transport in a one-dimensional quantum wire described by Luttinger liquid theory. A hydrodynamic description for the quantum wire is supplemented by boundary conditions taking into account the exchange…

强关联电子 · 物理学 2009-10-31 Leon Balents , Reinhold Egger

We have studied the spin-splitting effect in a four-terminal two-dimensional (2D) electron gas system with two potential barriers generated by two surface metal gates and an external perpendicular magnetic field. The calculations show that…

介观与纳米尺度物理 · 物理学 2019-06-26 Zijiang Wang , Jianhong He , Huazhong Guo